Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

Ferroelectric hafnia-based thin films have attracted intense attention due to their
compatibility with complementary metal-oxide-semiconductor technology. However, the …

Softening of the transverse optical (TO) phonon, which could trigger ferroelectric phase
transition, can usually be achieved by enhancing the long-range Coulomb interaction over …

A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is
demonstrated through nanosecond laser annealing (NLA) of as‐deposited Si/SiOx/W (14 …

Since the discovery of ferroelectricity in doped HfO2 and ZrO2 thin films over a decade ago,
fluorite‐structured ferroelectric thin films have attracted much research attention due to their …

Memristors have been emerging as promising candidates for computing systems in post‐
Moore applications, particularly electrochemical metallization‐based memristors, which are …

Dielectric electrostatic capacitors1, due to their ultrafast charge-discharge capability, are
attractive for high power energy storage applications. Along with ultrafast operation, on-chip …

The size and electric field dependent induction of polarization in antiferroelectric ZrO2 is the
key to several technological applications that are unimaginable a decade ago. However, the …

Fluorite-structured binary oxide ferroelectrics exhibit robust ferroelectricity at a thickness
below 10 nm, making them highly scalable and applicable for high-end semiconductor …

Self‐powered near‐infrared (NIR) photodetectors are essential for surveillance systems,
sensing in IoT electronics, facial recognition, health monitoring, optical communication …