Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Polarity in GaN and ZnO: Theory, measurement, growth, and devices
The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
of a spontaneous electric polarization within these materials and their associated alloys (Ga …
Dynamic on-resistance in GaN power devices: Mechanisms, characterizations, and modeling
S Yang, S Han, K Sheng… - IEEE Journal of Emerging …, 2019 - ieeexplore.ieee.org
Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
N Wu, Z Xing, S Li, L Luo, F Zeng… - … Science and Technology, 2023 - iopscience.iop.org
Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
Effects of recess depths on performance of AlGaN/GaN power MIS-HEMTs on the Si substrates and threshold voltage model of different recess depths for the using …
Y Zhao, C Wang, X Zheng, X Ma, Y He, K Liu, A Li… - Solid-State …, 2020 - Elsevier
Three types of E-mode AlGaN/GaN MIS-HEMTs with different barrier depths and
conventional HEMT were fabricated on the Si substrates. HfO 2 gate insulator with a …
conventional HEMT were fabricated on the Si substrates. HfO 2 gate insulator with a …
High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: a simulation study
C Sivamani, P Murugapandiyan, A Mohanbabu… - Microelectronics …, 2023 - Elsevier
We report high-performance E-mode HEMT with ultra-wide bandgap β-Ga 2 O 3 buffer using
numerical simulation. The proposed normally-off HEMT showed high breakdown …
numerical simulation. The proposed normally-off HEMT showed high breakdown …
Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By O Based Gate Stack Engineering
In this paper, for the first time, we have experimentally demonstrated enhancement mode (e-
mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type …
mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type …
Enhancement-mode GaN double-channel MOS-HEMT with low on-resistance and robust gate recess
An enhancement-mode GaN double-channel MOS-HEMT (DC-MOS-HEMT) was fabricated
on a double-channel heterostructure, which features a 1.5-nm AlN layer (AlN-ISL) inserted 6 …
on a double-channel heterostructure, which features a 1.5-nm AlN layer (AlN-ISL) inserted 6 …
Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrOₓ Charge Trapping Layer
Y Cai, Y Zhang, Y Liang, IZ Mitrovic… - … on Electron Devices, 2021 - ieeexplore.ieee.org
Novel normally-OFF AlGaN/GaN MIS-high electron mobility transistors (HEMTs) with a ZrO x
charge trapping layer are proposed. The deposition of the ZrO x charge trapping layer on the …
charge trapping layer are proposed. The deposition of the ZrO x charge trapping layer on the …
Normally-OFF GaN MIS-HEMT With F− Doped Gate Insulator Using Standard Ion Implantation
CH Wu, PC Han, QH Luc, CY Hsu… - IEEE Journal of the …, 2018 - ieeexplore.ieee.org
A normally-OFF GaN metal-insulator-gate high electron mobility transistors with fluorine
doped gate insulator has been fabricated using standard ion implantation technique …
doped gate insulator has been fabricated using standard ion implantation technique …