Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …

Electro-absorption from GeSi heterostructures is receiving growing attention as a high
performance optical modulator for short distance optical interconnects. Ge incorporation with …

This work presents a comprehensive study of electroabsorption in CdSe colloidal quantum
dots, nanorods, and nanoplatelets. We experimentally demonstrate that the exposure of the …

Low-voltage swing (≤ 1.0 V) high-contrast ratio (6 dB) electro-absorption modulation
covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum …

Si-Based microdisks with Ge quantum dots (QDs) have been of great interest due to their
potential as the desired light source for monolithic optical-electronic integrated circuits …

We report on the design and simulation of a waveguide-integrated Ge/SiGe quantum-
confined Stark effect (QCSE) optical modulator based on the use of a Ge-rich SiGe relaxed …

Self-assembled Ge-rich quantum dots (QDs) can not only act as a prototype model for the
fundamental studies of heteroepitaxial growth but also have great potential in optoelectronic …

We report on 3-D FDTD simulation of waveguide-integrated plasmonic Ge/SiGe MQWs
photodetectors. Despite several significant works on Ge/SiGe MQW optical modulators …

A novel concept of utilizing electro-optical active oxides in silicon photonic devices is
developed and realized in the frame of this thesis. The integration of such oxides extends …

High-quality Ge nanostructures are obtained by molecular beam epitaxy of Ge on Si (001)
substrates at 200 C and ex situ annealing at 400 C. Their structural properties are …