The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
A David, NG Young, C Lund… - ECS Journal of Solid …, 2019 - iopscience.iop.org
The physics of carrier recombinations in III-nitride light emitters are reviewed, with an emphasis on experimental investigations. After a discussion of various methods of …
D Feezell, S Nakamura - Comptes Rendus Physique, 2018 - Elsevier
The realization of the first high-brightness blue-light-emitting diodes (LEDs) in 1993 sparked a more than twenty-year period of intensive research to improve their efficiency. Solutions to …
We demonstrate a high-speed nonpolar m-plane InGaN/GaN micro-scale light-emitting diode (LED) with a record electrical-3 dB modulation bandwidth of 1.5 GHz at a current …
JI Holly Haggar, SS Ghataora, V Trinito, J Bai… - ACS …, 2022 - ACS Publications
Time-resolved photoluminescence (TRPL) is often used to study the excitonic dynamics of semiconductor optoelectronics such as the carrier recombination lifetime of III-nitride light …
F Xu, Z Jin, T Tao, P Tian, G Wang, X Liu… - IEEE Electron …, 2022 - ieeexplore.ieee.org
A high-speed c-plane InGaN/GaN blue micro-scale light-emitting diodes (Micro-LEDs) with a pixel diameter of, and a high− 3 dB modulation bandwidth of 1.53 GHz at the current density …
MicroLEDs offer an extraordinary combination of high luminance, high energy efficiency, low cost, and long lifetime. These characteristics are highly desirable in various applications, but …
We present the first demonstration of RF characteristics of electrically injected GaN/InGaN core–shell nanowire-based micro light-emitting diodes (μLEDs) for μLED displays and …
This paper investigated the use of semipolar InGaN/GaN multiple quantum well based micro- photodetectors (μPDs) as the optical receiver for visible light communication (VLC). The …