[HTML][HTML] Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano-and micro-LEDs

HS Wasisto, JD Prades, J Gülink, A Waag - Applied Physics Reviews, 2019 - pubs.aip.org
Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in
modern lighting. In the last decade, a huge global market of efficient, long-lasting, and …

A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges

M Monavarian, A Rashidi, D Feezell - physica status solidi (a), 2019 - Wiley Online Library
The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …

The physics of recombinations in III-nitride emitters

A David, NG Young, C Lund… - ECS Journal of Solid …, 2019 - iopscience.iop.org
The physics of carrier recombinations in III-nitride light emitters are reviewed, with an
emphasis on experimental investigations. After a discussion of various methods of …

[HTML][HTML] Invention, development, and status of the blue light-emitting diode, the enabler of solid-state lighting

D Feezell, S Nakamura - Comptes Rendus Physique, 2018 - Elsevier
The realization of the first high-brightness blue-light-emitting diodes (LEDs) in 1993 sparked
a more than twenty-year period of intensive research to improve their efficiency. Solutions to …

Nonpolar -Plane InGaN/GaN Micro-Scale Light-Emitting Diode With 1.5 GHz Modulation Bandwidth

A Rashidi, M Monavarian, A Aragon… - IEEE Electron …, 2018 - ieeexplore.ieee.org
We demonstrate a high-speed nonpolar m-plane InGaN/GaN micro-scale light-emitting
diode (LED) with a record electrical-3 dB modulation bandwidth of 1.5 GHz at a current …

Study of the luminescence decay of a semipolar green light-emitting diode for visible light communications by time-resolved electroluminescence

JI Holly Haggar, SS Ghataora, V Trinito, J Bai… - ACS …, 2022 - ACS Publications
Time-resolved photoluminescence (TRPL) is often used to study the excitonic dynamics of
semiconductor optoelectronics such as the carrier recombination lifetime of III-nitride light …

C-plane blue micro-LED with 1.53 GHz bandwidth for high-speed visible light communication

F Xu, Z Jin, T Tao, P Tian, G Wang, X Liu… - IEEE Electron …, 2022 - ieeexplore.ieee.org
A high-speed c-plane InGaN/GaN blue micro-scale light-emitting diodes (Micro-LEDs) with a
pixel diameter of, and a high− 3 dB modulation bandwidth of 1.53 GHz at the current density …

MicroLED/LED electro-optical integration techniques for non-display applications

V Kumar, I Kymissis - Applied Physics Reviews, 2023 - pubs.aip.org
MicroLEDs offer an extraordinary combination of high luminance, high energy efficiency, low
cost, and long lifetime. These characteristics are highly desirable in various applications, but …

Electrically injected GHz-class GaN/InGaN core–shell nanowire-based μLEDs: carrier dynamics and nanoscale homogeneity

M Nami, A Rashidi, M Monavarian… - Acs …, 2019 - ACS Publications
We present the first demonstration of RF characteristics of electrically injected GaN/InGaN
core–shell nanowire-based micro light-emitting diodes (μLEDs) for μLED displays and …

Semipolar (20_2_1) InGaN/GaN micro-photodetector for gigabit-per-second visible light communication

CH Kang, G Liu, C Lee, O Alkhazragi, JM Wagstaff… - 2019 - repository.kaust.edu.sa
This paper investigated the use of semipolar InGaN/GaN multiple quantum well based micro-
photodetectors (μPDs) as the optical receiver for visible light communication (VLC). The …