The long dreamed 'quantum internet'would consist of a network of quantum nodes (solid-
state or atomic systems) linked by flying qubits, naturally based on photons, travelling over …

Atomic force microscopy (AFM) is a key tool for nanotechnology research and finds its
principal application in the determination of surface topography. However, the use of the …

In this paper, we have made a systematic study of the electronic and optical properties of
InGaN based quantum dot light emitters. The valence force field model and 6× 6 k⋅ p …

Nanoposts of 10–40 nm top diameter on an InGaN/GaN quantum well structure were
fabricated using electron-beam lithography and inductively coupled plasma reactive ion …

Ultra-thin quantum wells, with their unique charge confinement effects, are essential in
enhancing the electronic and optical properties crucial for optoelectronic device …

Light-emitting diodes (LEDs) based on an interconnected array of GaN/InGaN micro-ring
elements have been demonstrated. The devices have electrical characteristics similar to …

InGaN-based active layers within microcavity resonators offer the potential of low threshold
lasers in the blue spectral range. Here, we demonstrate optically pumped, room temperature …

InGaN quantum dots were grown by metal-organic vapor phase epitaxy using a phase-
separation process based on spinodal and binodal decomposition. Uncapped structures …

A pencil-like morphology of homoepitaxially grown GaN nanowires is exploited for the
fabrication of thin conformal intrawire InGaN nanoshells which host quantum dots in …

In this work, we demonstrate ultra-low-threshold, optically pumped, room-temperature lasing
in GaN microdisk and micro-ring cavities containing InGaN quantum dots and fragmented …