[HTML][HTML] Ferroelectric materials for neuroinspired computing applications
In recent years, the emergence of numerous applications of artificial intelligence (AI) has
sparked a new technological revolution. These applications include facial recognition …
sparked a new technological revolution. These applications include facial recognition …
Hafnium oxide-based ferroelectric devices for in-memory computing: resistive and capacitive approaches
The integration of ferroelectric hafnium oxide (HfO2) into semiconductor device structures
has been a breakthrough in the development of state-of-the-art in-memory computing (IMC) …
has been a breakthrough in the development of state-of-the-art in-memory computing (IMC) …
High-speed emerging memories for AI hardware accelerators
Applications of artificial intelligence (AI) necessitate AI hardware accelerators able to
efficiently process data-intensive and computation-intensive AI workloads. AI accelerators …
efficiently process data-intensive and computation-intensive AI workloads. AI accelerators …
Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering
Ferroelectric materials have been widely researched for applications in memory and energy
storage. Among these materials and benefiting from their excellent chemical compatibility …
storage. Among these materials and benefiting from their excellent chemical compatibility …
Giant energy storage and power density negative capacitance superlattices
Dielectric electrostatic capacitors1, due to their ultrafast charge-discharge capability, are
attractive for high power energy storage applications. Along with ultrafast operation, on-chip …
attractive for high power energy storage applications. Along with ultrafast operation, on-chip …
3D Vertical Ferroelectric Capacitors with Excellent Scalability
Three-dimensional vertically stacked memory is more cost-effective than two-dimensional
stacked memory. Vertically stacked memory using ferroelectric materials has great potential …
stacked memory. Vertically stacked memory using ferroelectric materials has great potential …
Direct growth of ferroelectric orthorhombic ZrO 2 on Ru by atomic layer deposition at 300° C
Fluorite-structured binary oxide ferroelectrics exhibit robust ferroelectricity at a thickness
below 10 nm, making them highly scalable and applicable for high-end semiconductor …
below 10 nm, making them highly scalable and applicable for high-end semiconductor …
[HTML][HTML] Simultaneously achieving high-κ and strong ferroelectricity in Hf0. 5Zr0. 5O2 thin film by structural stacking design
Y Wang, J Li, H Zhu, H Bu, X Du, S Shen, Y Yin… - Journal of Materiomics, 2025 - Elsevier
The superior dielectric and ferroelectric properties of HfO 2-based thin films, coupled with
excellent silicon compatibility, position them as highly attractive candidates for dynamic and …
excellent silicon compatibility, position them as highly attractive candidates for dynamic and …
Progress of emerging non-volatile memory technologies in industry
M Hellenbrand, I Teck, JL MacManus-Driscoll - MRS communications, 2024 - Springer
This prospective and performance summary provides a view on the state of the art of
emerging non-volatile memory (eNVM) in the semiconductor industry. The overarching aim …
emerging non-volatile memory (eNVM) in the semiconductor industry. The overarching aim …
Integration of ferroelectric hfo2 onto a iii-v nanowire platform
AEO Persson - 2023 - portal.research.lu.se
The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide,
has opened new possibilities for electronics by reviving the use of ferroelectric …
has opened new possibilities for electronics by reviving the use of ferroelectric …