Abstract In this work AlGaN/AlN/GaN MOS-HEMTs based biosensors have been proposed
and simulated for the rapid test and ultrasensitive detection of various viruses. The proposed …

The effect of InGaN notch on sensitivity and Dielectric Modulated (DM) Double
Heterojunction (DH) dual channel AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide …

We present an analytical model for Ferro PZT Al2O3/AlGaN/AlN/GaN MOSHEMT involving
the solution of Poisson and Schrödinger equations. This analytical model covers most of the …

In this proposed work, the effect of capacitance and linearity were extensively analyzed on
the performance of dual-channel (DC) AlGaN/GaN MOSHEMTs for improved sensitivity and …

In this work, the 3-aminopropyltriethoxysilane (APTES) was functionalized in the gate region
of AlGaN/GaN high electron mobility transistor (HEMT) for carbon dioxide sensing. The …

The detailed analytical model of biosensing parameters was proposed for a double-cavity
graded MgZnO/ZnO metal oxide semiconductor high electron mobility transistor …

To improve the sensing performance, the GaN-based MOS-HEMT biosensor with graded
AlGaN barrier was proposed and investigated by Silvaco TCAD. The simulation results …

Proteins are existing in different condensations in samples of various origins and knowing
their focus is especially important as there are different techniques to detect them. In this …

This paper focuses on the impact of gate-engineered dielectric-modulated GaN MOSHEMT
with InGaN notch on sensitivity enhancement for label-free biosensing. The novelty of this …

We report a sensitivity controllable infrared (IR) sensor composed of a thermopile and a n-
channel metal oxide semiconductor (NMOS). In the sensor, the cathode of the thermopile is …