Amorphous InGaZnO (a-IGZO) synaptic transistor for neuromorphic computing

Y Jang, J Park, J Kang, SY Lee - ACS Applied Electronic Materials, 2022 - ACS Publications
Brain-inspired neuromorphic computing emulates the biological functions of the human
brain to achieve highly intensive data processing with low power consumption. In particular …

Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

P Ma, L Du, Y Wang, R Jiang, Q Xin, Y Li… - Applied Physics …, 2018 - pubs.aip.org
An ultrathin, 5 nm, Al 2 O 3 film grown by atomic-layer deposition was used as a gate
dielectric for amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The …

[HTML][HTML] Energy band offsets of dielectrics on InGaZnO4

DC Hays, BP Gila, SJ Pearton, F Ren - Applied Physics Reviews, 2017 - pubs.aip.org
Thin-film transistors (TFTs) with channels made of hydrogenated amorphous silicon (a-Si: H)
and polycrystalline silicon (poly-Si) are used extensively in the display industry. Amorphous …

High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlOx Insulator

J Li, Y Zhang, J Wang, H Yang, X Zhou… - IEEE Electron …, 2022 - ieeexplore.ieee.org
Electrical characteristics of self-aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-
film transistors (TFTs) with 4 nm-thick atomic-layer-deposited (ALD) AlO x gate insulator (GI) …

Glucose sensing using functionalized amorphous In–Ga–Zn–O field-effect transistors

X Du, Y Li, JR Motley, WF Stickle… - ACS applied materials & …, 2016 - ACS Publications
Recent advances in glucose sensing have focused on the integration of sensors into contact
lenses to allow noninvasive continuous glucose monitoring. Current technologies focus …

High-Performance Unannealed a-InGaZnO TFT With an Atomic-Layer-Deposited SiO2 Insulator

LL Zheng, Q Ma, YH Wang, WJ Liu… - IEEE Electron …, 2016 - ieeexplore.ieee.org
Amorphous In-Ga-Zn-O (a-IGZO) thin-film transistor with an atomic-layer-deposited (ALD)
SiO 2 gate insulator was fabricated under a maximum processing temperature of 250° C and …

Effect of the oxygen dependent device parameters on the electrical properties of a-Si-Zn-Sn-O thin film transistors

A Kumar, SY Lee - Microelectronic Engineering, 2022 - Elsevier
The effect of partial pressure of oxygen on the amorphous Si-Zn-Sn-O thin film transistor is
investigated. Sputtered amorphous films were deposited at various oxygen partial pressures …

Reduction of leakage current in amorphous Oxide-Semiconductor Top-gated thin film transistors by interface engineering with dipolar Self-Assembled monolayers

YH Liang, S Kumaran, M Zharnikov, Y Tai - Applied Surface Science, 2021 - Elsevier
Top gate (TG) thin film transistors (TFTs) featuring amorphous metal oxide semiconductors
(a-MOS), such as indium-gallium-zinc-oxide (IGZO), bear a great potential for large-area …

IGZO/Al2O3 based depressed synaptic transistor

Y Liu, X Wang, W Chen, L Zhao, W Zhang… - Superlattices and …, 2019 - Elsevier
Bionic devices, such as potentiated synaptic devices, have obtained a lot of attention over
the past years. However, depressed synaptic devices, which are equally significant in brain …

Low Operating Voltage Solution Processed (Li₂ZnO₂) Dielectric and (SnO₂) Channel-Based Medium Wave UV-B Phototransistor for Application in Phototherapy

AK Singh, NK Chourasia, BN Pal… - … on Electron Devices, 2020 - ieeexplore.ieee.org
UV lamps used for phototherapy for the treatment of several skin diseases do not have
uniform output. This makes the treatment difficult and less responsive. A Ultraviolet B (UV-B) …