Photoelectron spectroscopy studies of SiO2/Si interfaces

K Hirose, H Nohira, K Azuma, T Hattori - Progress in Surface Science, 2007 - Elsevier
We describe state-of-the-art photoelectron spectroscopy studies of SiO2/Si interfaces that
play fundamental roles in metal-oxide-semiconductor (MOS) field-effect transistors. We show …

Localization and mitigation of loss in niobium superconducting circuits

MVP Altoé, A Banerjee, C Berk, A Hajr, A Schwartzberg… - PRX Quantum, 2022 - APS
Materials imperfections in planar superconducting quantum circuits—in particular, two-level-
system (TLS) defects—contribute significantly to decoherence, ultimately limiting the …

In situ x-ray photoelectron spectroscopy for electrochemical reactions in ordinary solvents

T Masuda, H Yoshikawa, H Noguchi… - Applied Physics …, 2013 - pubs.aip.org
In situ electrochemical X-ray photoelectron spectroscopy (XPS) apparatus, which allows
XPS at solid/liquid interfaces under potential control, was constructed utilizing a microcell …

Computational study on interfaces and interface defects of amorphous silica and silicon

P Li, Y Song, X Zuo - physica status solidi (RRL)–Rapid …, 2019 - Wiley Online Library
The amorphous SiO2/Si interface is arguably the most important part in semiconductor
technology, strongly influencing the device reliability. Its electronic structure is affected by …

Nanostructured Si/organic heterojunction solar cells with high open‐circuit voltage via improving junction quality

S Wu, W Cui, N Aghdassi, T Song… - Advanced Functional …, 2016 - Wiley Online Library
Nanostructured silicon (Si) can provide improved light harvest efficiencies in organic‐Si
heterojunction solar cells due to its low light reflection ratio compared with planar one …

Silica-derived hydrophobic colloidal nano-Si for lithium-ion batteries

Z Liu, X Chang, T Wang, W Li, H Ju, X Zheng, X Wu… - ACS …, 2017 - ACS Publications
Silica can be converted to silicon by magnesium reduction. Here, this classical reaction is
renovated for more efficient preparation of silicon nanoparticles (nano-Si). By reducing the …

Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy

E Bersch, M Di, S Consiglio, RD Clark… - Journal of Applied …, 2010 - pubs.aip.org
The HfO 2–Si valence and conduction band offsets (VBO and CBO, respectively) of
technologically relevant HfO 2/SiO 2/Si film stacks have been measured by several methods …

Chemical structure of the interface in ultrathin films

JC Lee, SJ Oh, M Cho, CS Hwang, R Jung - Applied physics letters, 2004 - pubs.aip.org
The chemical states of the HfO 2/Si (100) interface were investigated using transmission
electron microscopy and high-resolution x-ray photoelectron spectroscopy. The depth …

In situ chemical and structural investigations of the oxidation of Ge (001) substrates by atomic oxygen

A Molle, MNK Bhuiyan, G Tallarida… - Applied physics letters, 2006 - pubs.aip.org
The exposure of Ge (001) substrates to atomic oxygen was studied in situ to establish the
stability of the germanium oxide. After preparing chemically clean and atomically flat Ge …

Theory of atomic-scale dielectric permittivity at insulator interfaces

F Giustino, A Pasquarello - Physical Review B—Condensed Matter and …, 2005 - APS
We develop a theory for investigating atomic-scale dielectric permittivity profiles across
interfaces between insulators. A local susceptibility χ (x; ω) is introduced to describe …