Materials imperfections in planar superconducting quantum circuits—in particular, two-level- system (TLS) defects—contribute significantly to decoherence, ultimately limiting the …
T Masuda, H Yoshikawa, H Noguchi… - Applied Physics …, 2013 - pubs.aip.org
In situ electrochemical X-ray photoelectron spectroscopy (XPS) apparatus, which allows XPS at solid/liquid interfaces under potential control, was constructed utilizing a microcell …
P Li, Y Song, X Zuo - physica status solidi (RRL)–Rapid …, 2019 - Wiley Online Library
The amorphous SiO2/Si interface is arguably the most important part in semiconductor technology, strongly influencing the device reliability. Its electronic structure is affected by …
S Wu, W Cui, N Aghdassi, T Song… - Advanced Functional …, 2016 - Wiley Online Library
Nanostructured silicon (Si) can provide improved light harvest efficiencies in organic‐Si heterojunction solar cells due to its low light reflection ratio compared with planar one …
Z Liu, X Chang, T Wang, W Li, H Ju, X Zheng, X Wu… - ACS …, 2017 - ACS Publications
Silica can be converted to silicon by magnesium reduction. Here, this classical reaction is renovated for more efficient preparation of silicon nanoparticles (nano-Si). By reducing the …
E Bersch, M Di, S Consiglio, RD Clark… - Journal of Applied …, 2010 - pubs.aip.org
The HfO 2–Si valence and conduction band offsets (VBO and CBO, respectively) of technologically relevant HfO 2/SiO 2/Si film stacks have been measured by several methods …
JC Lee, SJ Oh, M Cho, CS Hwang, R Jung - Applied physics letters, 2004 - pubs.aip.org
The chemical states of the HfO 2/Si (100) interface were investigated using transmission electron microscopy and high-resolution x-ray photoelectron spectroscopy. The depth …
The exposure of Ge (001) substrates to atomic oxygen was studied in situ to establish the stability of the germanium oxide. After preparing chemically clean and atomically flat Ge …
We develop a theory for investigating atomic-scale dielectric permittivity profiles across interfaces between insulators. A local susceptibility χ (x; ω) is introduced to describe …