The integration of III–V semiconductors with Si has been pursued for more than 25 years
since it is strongly desired in various high-efficiency applications ranging from …

Four-point probe characterization is a standard method for studying the electrical properties
of solids and thin films. The probe spacing in four-point probe technique has to be reduced …

Ultrafast control of current on the atomic scale is essential for future innovations in
nanoelectronics. Extremely localized transient electric fields on the nanoscale can be …

The ground state of Sn/Si (111) and Sn/Ge (111) surface α phases is reexamined
theoretically, based on ab initio calculations where correlations are approximately included …

This paper introduces for the first time near-field electrohydrodynamic jet printing with tilted-
outlet nozzle to obtain the fine and highly conductive patterns of silver (Ag) ink. Line widths …

The dynamics of hot electrons are central to understanding the properties of many electronic
devices. But their ultra-short lifetime, typically 100 fs or less, and correspondingly short …

We present room temperature resistivity measurements of shallow, monolayer doped
phosphorus in silicon, a material system of interest for both conventional microelectronic …

Progress in performing angle-resolved photoemission spectroscopy (ARPES) with high
spatial resolution on the order of 1 lm or less (nanoARPES) has opened the possibility to …

While it is known that the Si-(7× 7) is a conducting surface, measured conductivity values
differ by 7 orders of magnitude. Here we report a combined STM and transport method …

Conductivity of the metallic dangling-bond state of adatoms on Si (111) 7× 7 clean surface
was determined through passivation of the only electrical channel by∼ 0.1 monolayer Na …