An Extended L–2L De-Embedding Method for Modeling and Low Return-Loss Transition of Millimeter Wave Signal Through Silicon Interposer

P Namaki, N Masoumi, M Seyedi… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
This article presents a new modeling and optimization approach for low return-loss transition
of millimeter wave signals in flip-chip die-to-die interconnects using silicon interposer …

A four-channel bi-directional CMOS core chip for X-band phased array T/R modules

S Sim, B Kang, JG Kim, JH Chun… - 2015 IEEE Radar …, 2015 - ieeexplore.ieee.org
This paper presents a four-channel bi-directional core chip in 0.13 um CMOS for X-band
phased array Transmit/Receive (T/R) module. Each channel consists of a 5-bit step …

Modified low temperature Czochralski growth of xylenol orange doped benzopheone single crystal for fabricating dual band patch antenna

H Yadav, N Sinha, B Kumar - Journal of Crystal Growth, 2016 - Elsevier
Organic non-linear optical pure and xylenol orange (XO) doped benzophenone (BP) single
crystals have been grown by a modified Czochralski technique. A low cost CZ system was …

Encapsulated organic package technology for wideband integration of heterogeneous MMICs

S Pavlidis, G Alexopoulos, AÇ Ulusoy… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
The heterogeneous integration of silicon germanium (SiGe) and gallium arsenide (GaAs)
technologies is presented using a novel encapsulated packaging approach with organic …

Integrated microfluidic cooling for GaN devices on multilayer organic LCP substrate

OL Chlieh, CAD Morcillo, S Pavlidis… - 2013 IEEE MTT-S …, 2013 - ieeexplore.ieee.org
This paper presents, for the first time, an integrated microfluidic cooling scheme on
multilayer organic liquid crystal polymer (LCP) substrate for high power X-band gallium …

A 5.4 W X-band gallium nitride (GaN) power amplifier in an encapsulated organic package

S Pavlidis, AÇ Ulusoy… - 2015 European …, 2015 - ieeexplore.ieee.org
Gallium nitride (GaN) amplifiers are inherently well suited for high power applications, but
their increased power densities call for high thermal conductivity (k) substrates, such as …

Planar antenna with integrated low noise receiver

JE Rogers, K Kwan, PT Bushey - US Patent 10,938,120, 2021 - Google Patents
A planar antenna with an integrated receiver based on aperture coupled antenna elements
with inclusive slots elec trically coupled to a microstrip feed network residing above a lower …

Design of a Ka-band receiver front end using Si-based system in package

H Zhu, J Li, Q Wang, L Cao - IEICE Electronics Express, 2021 - jstage.jst.go.jp
This letter presents a Ka-band receiver front end in the form of system in package using
silicon substrate. The front end adopts a dualchannel superheterodyne structure, two GaAs …

A feasibility study of flip-chip packaged gallium nitride HEMTs on organic substrates for wideband RF amplifier applications

S Pavlidis, AC Ulusoy, WT Khan… - 2014 IEEE 64th …, 2014 - ieeexplore.ieee.org
Gallium nitride (GaN) technology has emerged as a frontrunner for high power electronics
applications. By performing a survey of wire-bond and flip-chip-packaged GaN HEMTs on …

Steerable antenna assembly

JE Rogers, CM Thacker - US Patent 10,992,037, 2021 - Google Patents
An antenna assembly includes a composite substrate. One or more first antenna elements
are secured to the composite substrate. A microstrip feed network is secured to the …