Cross-point memory array without cell selectors—Device characteristics and data storage pattern dependencies
Cross-point memory architecture offers high device density, yet it suffers from substantial
sneak path leakages, which result in large power dissipation and a small sensing margin …
sneak path leakages, which result in large power dissipation and a small sensing margin …
RRAM crossbar array with cell selection device: A device and circuit interaction study
The resistive random access memory (RRAM) crossbar array has been extensively studied
as one of the most promising candidates for future high-density nonvolatile memory …
as one of the most promising candidates for future high-density nonvolatile memory …
Integrated complementary resistive switches for passive high-density nanocrossbar arrays
Recently, the sneak-path obstacle in passive crossbar arrays has been overcome by the
invention of complementary resistive switches (CRSs) consisting of two bipolar antiserially …
invention of complementary resistive switches (CRSs) consisting of two bipolar antiserially …
Investigation of the electroforming process in resistively switching TiO2 nanocrosspoint junctions
C Nauenheim, C Kuegeler, A Ruediger… - Applied physics …, 2010 - pubs.aip.org
We report on the electroforming in resistively switching nanocrosspoint devices made of a
reactively sputtered TiO 2 thin film between Pt and Ti/Pt electrodes, respectively. As most …
reactively sputtered TiO 2 thin film between Pt and Ti/Pt electrodes, respectively. As most …
Bipolar Resistive RAM Based on : Physics, Compact Modeling, and Variability Control
FM Puglisi, L Larcher, A Padovani… - IEEE Journal on …, 2016 - ieeexplore.ieee.org
In this paper, we thoroughly investigate the characteristics of the TiN/Ti/HfO 2/TiN resistive
random access memory (RRAM) device. The physical mechanisms involved in the device …
random access memory (RRAM) device. The physical mechanisms involved in the device …
Memristive non-idealities: Is there any practical implications for designing neural network chips?
O Krestinskaya, A Irmanova… - 2019 IEEE International …, 2019 - ieeexplore.ieee.org
The impact of device-to-device, cycle-to-cycle, and parasitic variations in memristor devices
on the performance of neural network architectures is not a fully understood topic. In this …
on the performance of neural network architectures is not a fully understood topic. In this …
Evolving system architecture to meet changing business goals: an agent and goal-oriented approach
Today's requirements engineering approaches focus on notation and techniques for
modeling the intended functionality and qualities of a software system. Little attention has …
modeling the intended functionality and qualities of a software system. Little attention has …
The 3-D stacking bipolar RRAM for high density
For its simple structure, high density, and good scalability, the resistive random access
memory (RRAM) has emerged as one of the promising candidates for large data storage in …
memory (RRAM) has emerged as one of the promising candidates for large data storage in …
A study of the effect of RRAM reliability soft errors on the performance of RRAM-based neuromorphic systems
Resistive RAM (RRAM) device has been extensively used as a scalable nonvolatile memory
cell in neuromorphic systems due to its several advantages, including its small size and low …
cell in neuromorphic systems due to its several advantages, including its small size and low …
Analysis of RRAM reliability soft-errors on the performance of RRAM-based neuromorphic systems
Due to the limitation in speed and throughput of the traditional Von Neumann architecture,
the interest in brain inspired neuromorphic systems has been the focus of recent research …
the interest in brain inspired neuromorphic systems has been the focus of recent research …