Nanoscale resistive switching devices for memory and computing applications
With the slowing down of the Moore's law and fundamental limitations due to the von-
Neumann bottleneck, continued improvements in computing hardware performance become …
Neumann bottleneck, continued improvements in computing hardware performance become …
Implementation of convolutional neural network and 8-bit reservoir computing in CMOS compatible VRRAM
Abstract We developed W/HfO 2/TiN vertical resistive random-access memory (VRRAM) for
neuromorphic computing. First, basic electrical properties, such as current–voltage curves …
neuromorphic computing. First, basic electrical properties, such as current–voltage curves …
Towards engineering in memristors for emerging memory and neuromorphic computing: A review
Resistive random-access memory (RRAM), also known as memristors, having a very simple
device structure with two terminals, fulfill almost all of the fundamental requirements of …
device structure with two terminals, fulfill almost all of the fundamental requirements of …
MoS2 Synapses with Ultra-low Variability and Their Implementation in Boolean Logic
Brain-inspired computing enabled by memristors has gained prominence over the years due
to the nanoscale footprint and reduced complexity for implementing synapses and neurons …
to the nanoscale footprint and reduced complexity for implementing synapses and neurons …
Tantalum pentoxide (Ta2O5 and Ta2O5-x)-based memristor for photonic in-memory computing application
Photonic in-memory computing exhibits promising potential to address the inherent
limitations of traditional von Neumann architecture. In this study, we demonstrate a tantalum …
limitations of traditional von Neumann architecture. In this study, we demonstrate a tantalum …
Highly uniform resistive switching characteristics of Ti/TaOx/ITO memristor devices for neuromorphic system
In this study, we focused on the uniformity of resistance states of Ti/TaO x/ITO devices and
the possibility of using them in neuromorphic applications under DC and pulse …
the possibility of using them in neuromorphic applications under DC and pulse …
Reconfigurable Quasi‐Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric–2D Semiconductor vdW Architectures
The functional reconfiguration of transistors and memory in homogenous ferroelectric
devices offers significant opportunities for implementing the concepts of in‐memory …
devices offers significant opportunities for implementing the concepts of in‐memory …
Thermodynamic origin of nonvolatility in resistive memory
Electronic switches based on the migration of high-density point defects, or memristors, are
poised to revolutionize post-digital electronics. Despite significant research, key …
poised to revolutionize post-digital electronics. Despite significant research, key …
Using NIR irradiation and magnetic bismuth ferrite microparticles to accelerate the removal of polystyrene microparticles from the drinking water
Magnetic bismuth ferrite (BiFO) microparticles were employed for the first time for the
removal of polystyrene (PS) nano/microplastics from the drinking water. BiFO is formed by …
removal of polystyrene (PS) nano/microplastics from the drinking water. BiFO is formed by …
A novel high-performance and energy-efficient RRAM device with multi-functional conducting nanofilaments
MC Wu, JY Chen, YH Ting, CY Huang, WW Wu - Nano Energy, 2021 - Elsevier
Resistive random access memory (RRAM) is a potential nonvolatile memory to apply in
large-scale integration systems due to its high switching speed and cost-effective priority …
large-scale integration systems due to its high switching speed and cost-effective priority …