A key material system for opto-and high-power electronics are III-nitrides. Their functionality
can be expanded when bandgap engineering is extended beyond common materials such …

High-quality two-dimensional (2D) crystalline boron nitride nanosheets (BNNSs) were
grown on silicon wafers by using pulsed plasma beam deposition techniques. Self-powered …

We have calculated formation enthalpies, bandgaps, and natural band alignment for MgO
1− x S x alloys by first-principles calculation based on density functional theory. The …

The objective of this paper is the examination of structural, electronic, and optical properties
of binary AlSb, AlN, and their novel ternary AlN x Sb 1− x alloys (x= 0.25, 0.5, and 0.75) …

The dilute-As InGaNAs-based quantum well (QW) active region and the corresponding large-
overlap design is analyzed by using a self-consistent 6-band method. Our study evaluates …

Wide-gap oxide materials including gallium oxide and aluminium oxide have been attracting
much interest due to their tremendous potential for application in power devices. In this work …

Efficient p-type doping of III-nitride materials is notoriously difficult due to their large
bandgaps, intrinsic n-type doping, and the large ionization energy of acceptors. Specifically …

The family of III-nitride semiconductors has gained tremendous attention over the course of
the last few decades, primarily owing to their favorable optoelectronic, electronic, chemical …

III-nitride-based semiconductors with wide-band-gape are deemed a potential candidate
due to the superior residual performance and high energy conversion efficiency. Therefore …

III-nitride semiconductors have achieved great success in wide ranging applications
including solid-state lighting, power electronics, photovoltaic, biosensing, etc. III-nitride …