A low-noise CMOS distributed amplifier for ultra-wide-band applications

K Moez, MI Elmasry - … Transactions on Circuits and Systems II …, 2008 - ieeexplore.ieee.org
To employ the distributed amplification technique for the design of ultra-wide-band low-
noise amplifiers, the poor noise performance of the conventional distributed amplifiers (DAs) …

Analysis and design of CMOS distributed amplifier using inductively peaking cascaded gain cell for UWB systems

YS Lin, JF Chang, SS Lu - IEEE Transactions on Microwave …, 2011 - ieeexplore.ieee.org
A low-power, high-gain (HG), and low-noise (LN) CMOS distributed amplifier (DA) using
cascaded gain cell, formed by an inductively parallel-peaking cascode-stage with a low-Q …

Design of a 2–12-GHz Bidirectional Distributed Amplifier in a 0.18- m CMOS Technology

A Alizadeh, M Meghdadi, M Yaghoobi… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
This paper presents the design and implementation of a bidirectional distributed amplifier
(BDDA) in a 0.18-μm CMOS process. The performance of the BDDA is theoretically …

DC∼ 10.5 GHz complimentary metal oxide semiconductor distributed amplifier with RC gate terminal network for ultra-wideband pulse radio systems

JF Chang, YS Lin - IET microwaves, antennas & propagation, 2012 - IET
A DC∼ 10.5 GHz complimentary metal oxide semiconductor (CMOS) distributed amplifier
(DA) with flat and low noise figure (NF), flat and high power gain (S21) and small group …

3–10 GHz low-power, low-noise CMOS distributed amplifier using splitting-load inductive peaking and noise-suppression techniques

JF Chang, YS Lin - Electronics letters, 2009 - IET
A CMOS distributed amplifier (DA) with flat and low noise figure (NF), and flat and high gain
(S21) is demonstrated. A flat and low NF was achieved by adopting a RL terminating …

Analysis and design of new active quasi circulator and circulators

R Bahri, A Abdipour, G Moradi - Progress In Electromagnetics Research, 2009 - jpier.org
This paper introduces two new type active quasi circulators and three new type active
circulators which use the out-of-phase power divider/combiner, symmetric/anti-symmetric …

Fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35 µm BiCMOS technology

YT Lin, T Wang, SS Lu - Electronics Letters, 2008 - IET
A fully integrated concurrent dual-band low noise amplifier with suspended inductors is
reported. Wideband input impedance matching and wideband low noise characteristics are …

Low-power, high-gain and low-noise CMOS distributed amplifier for UWB systems

JF Chang, YS Lin - Electronics letters, 2009 - IET
A 3–10 GHz CMOS distributed amplifier (DA) with flat and low noise figure (NF) and flat and
high power gain (S21) is demonstrated. A flat and low NF was achieved by adopting an RL …

Coupling effect of on-chip inductor with variable metal width

HM Hsu, JZ Chang, HC Chien - IEEE microwave and wireless …, 2007 - ieeexplore.ieee.org
This study proposes a proper layout of on-chip inductors to diminish the coupling effect in
silicon-based technology. Keeping self inductance constant, the mutual inductance is …

3–10GHz CMOS distributed amplifier low-power and low-noise and high-gain low noise amplifier for UWB systems

IC Chen, JR Yang - TENCON 2010-2010 IEEE Region 10 …, 2010 - ieeexplore.ieee.org
This study presents a 3-10GHz ultra-wideband low-noise amplifier (UWB LNA) with CMOS
distributed amplification,(DA) featuring low power consumption, flat response, high gain (S …