Electrical and interface state density properties of polyaniline–poly-3-methyl thiophene blend/p-Si Schottky barrier diode
We have formed conjugated polymeric aniline–thiophene organic material on p-Si substrate
by adding polyaniline–poly-3-methyl thiophene blend solution in acetonitrile on top of a p-Si …
by adding polyaniline–poly-3-methyl thiophene blend solution in acetonitrile on top of a p-Si …
The heterojunction diode application of mesoporous graphitic carbon nitride (mpg-C3N4)
In this study, morphological properties and Schottky diode application of mpg-C 3 N 4
material were investigated. XRD, SEM and TEM analyzes of this material were performed …
material were investigated. XRD, SEM and TEM analyzes of this material were performed …
Electrical characteristics of DNA-based metal-insulator-semiconductor structures
High quality sandwich device was fabricated from wheat DNA molecular film by solution
processing located between Au and n-type silicon inorganic semiconductor. We have …
processing located between Au and n-type silicon inorganic semiconductor. We have …
High performance GaAs metal-insulator–semiconductor devices using TiO2 as insulator layer
S Sönmezoğlu, S Akın - Current applied physics, 2012 - Elsevier
In the present study, Cu/TiO2/n-GaAs Metal-Insulator–Semiconductor (MIS) structure was
fabricated and the variation in electrical characteristics of this structure have been analyzed …
fabricated and the variation in electrical characteristics of this structure have been analyzed …
Growth and Characterization of CuO Nanostructures on Si for the Fabrication of CuO/p‐Si Schottky Diodes
CuO interlayers in the CuO/p‐Si Schottky diodes were fabricated by using CBD and sol‐gel
methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the …
methods. Deposited CuO layers were characterized by SEM and XRD techniques. From the …
Electrical properties and barrier modification of GaAs MIS Schottky device based on MEH-PPV organic interfacial layer
We report fabrication and electrical characterization of GaAs based metal-interfacial layer-
semiconductor (MIS) device with poly [2-methoxy-5-(2/-ethyl-hexyloxy)-1, 4-phenylene …
semiconductor (MIS) device with poly [2-methoxy-5-(2/-ethyl-hexyloxy)-1, 4-phenylene …
Fabrication and electrical characterization of pyrrole–aniline copolymer-based Schottky diodes
S Sönmezoğlu, CB Durmuş, R Taş… - Semiconductor …, 2011 - iopscience.iop.org
In this work, pyrrole–aniline copolymer/p-Si structure has been fabricated by forming a thin
organic copolymer film on a p-Si wafer. A good rectifying behavior was seen from the current …
organic copolymer film on a p-Si wafer. A good rectifying behavior was seen from the current …
The effect of hydrostatic pressure on the electrical characterization of Au/n-InP Schottky diodes
The effect of hydrostatic pressure on the interface state density and Schottky barrier diode
parameters such as ideality factor and barrier height obtained from the current–voltage (I–V) …
parameters such as ideality factor and barrier height obtained from the current–voltage (I–V) …
Fabrication and electrical characteristics of Perylene-3, 4, 9, 10-tetracarboxylic dianhydride/p-GaAs diode structure
This study aims to experimentally investigate whether Perylene-3, 4, 9, 10-tetracarboxylic
dianhydride (PTCDA) organic layer at p-GaAs/Ag interface affects electrical transport across …
dianhydride (PTCDA) organic layer at p-GaAs/Ag interface affects electrical transport across …
Controlling the optical absorption properties of δ-FETs by means of contact voltage and hydrostatic pressure effects
The effects of contact voltage and hydrostatic pressure on subband structure and optical
transitions in GaAs delta-Field Effect Transistor (δ-FET) are theoretically studied. The …
transitions in GaAs delta-Field Effect Transistor (δ-FET) are theoretically studied. The …