Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide
SV Tikhov, AI Belov, DS Korolev, IN Antonov… - Technical physics, 2020 - Springer
The electrophysical characteristics of a multilayer memristive Au/Ta/ZrO 2 (Y)/TaO x/TiN
structure have been studied. Electron and ion electret effects due to charge carrier trapping …
structure have been studied. Electron and ion electret effects due to charge carrier trapping …
An Atomic Force Microscopic Study of Resistive Switching Resonance Activation in ZrO2(Y) Films
DO Filatov, DA Antonov, IN Antonov, MA Ryabova… - Technical Physics, 2020 - Springer
Local resistive switching in a contact between the probe of an atomic force microscope
(AFM) and ZrO 2 (Y) films (including with a Ta 2 O 5 sublayer) on conducting substrates has …
(AFM) and ZrO 2 (Y) films (including with a Ta 2 O 5 sublayer) on conducting substrates has …
Resistive switching of memristors based on stabilized zirconia by complex signals
DO Filatov, DA Antonov, IN Antonov, AI Belov… - Physics of the Solid …, 2020 - Springer
The specific features of resistive switching, which was initiated by triangular pulses with a
high-frequency sine signal imposed on them, in experimental memristor prototypes based …
high-frequency sine signal imposed on them, in experimental memristor prototypes based …