Numerical modeling of a dielectric modulated surrounding-triple-gate germanium-source MOSFET (DM-STGGS-MOSFET)-based biosensor
This paper presents for the first time an analytical model of a dielectric modulated
surrounding-triple-gate MOSFET with a germanium source-based biosensor, which shows …
surrounding-triple-gate MOSFET with a germanium source-based biosensor, which shows …
Ge/Si interfaced label free nanowire BIOFET for biomolecules detection-analytical analysis
This paper comprehensively investigates a dielectric modulated Ge/Si interfaced label free
nanowire BIOFET for biomolecules detection. The main highlight of this work is the structural …
nanowire BIOFET for biomolecules detection. The main highlight of this work is the structural …
Analytical modeling and doping optimization for enhanced analog performance in a Ge/Si interfaced nanowire MOSFET
This paper critically investigates the effect of doping on different device characteristics of a
Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The …
Ge/Si interfaced nanowire MOSFET (GSI-NWM) for analog performance enhancement. The …
Physics based numerical model of a nanoscale dielectric modulated step graded germanium source biotube FET sensor: modelling and simulation
This paper proposes a novel dielectric modulated step-graded germanium source biotube
FET for label-free biosensing applications. Its integrated structure and unique design …
FET for label-free biosensing applications. Its integrated structure and unique design …
Analytical investigation of a triple surrounding gate germanium source metal–oxide–semiconductor field‐effect transistor with step graded channel for biosensing …
A Das, S Rewari, BK Kanaujia… - … Journal of Numerical …, 2023 - Wiley Online Library
This paper proposes a compact analytical model and comprehensively investigates the
biosensing performance of a novel dielectric modulated triple surrounding gate germanium …
biosensing performance of a novel dielectric modulated triple surrounding gate germanium …
Back-end-of-line compatible fully depleted CMOS inverters employing Ge p-FETs and α-InGaZnO n-FETs
In this letter, we demonstrate a complementary metal-oxide-semiconductor (CMOS) inverter
comprising a germanium p-type field-effect transistor (Ge p-FET) and an amorphous indium …
comprising a germanium p-type field-effect transistor (Ge p-FET) and an amorphous indium …
Quantum confinement effects in extremely thin body germanium n-MOSFETs
We explore the impact of varying channel thickness (from 8 to 1.5 nm) on extremely thin
germanium n-MOSFETs, by explicitly incorporating the quantum confinement effects in the …
germanium n-MOSFETs, by explicitly incorporating the quantum confinement effects in the …
Development of two-dimensional materials for electronic applications
Since the first report of promising electrical properties of Molybdenum disulfide (MoS 2)
transistors in 2011, two-dimensional materials with unique properties have attracted great …
transistors in 2011, two-dimensional materials with unique properties have attracted great …
Fully depleted Ge CMOS devices and logic circuits on Si
We systematically studied Ge CMOS devices and logic circuits fabricated on a GeOI
substrate, with the novel recessed channel and source/drain structures. Various channel …
substrate, with the novel recessed channel and source/drain structures. Various channel …
Demonstration of Ge nanowire CMOS devices and circuits for ultimate scaling
In this paper, Ge nanowire (NW) CMOS devices and circuits are analyzed in detail. Various
experiment splits are studied, including device geometry parameters such as the channel …
experiment splits are studied, including device geometry parameters such as the channel …