Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique …
B Poobalan, NS Hashim, M Natarajan… - Journal of Engineering …, 2024 - jets.itb.ac.id
This work analyzed the interactions between gate oxide thickness (Tox), voltage
dependence, and electron mobility (E-mobility) in the inversion layer, which controls the …
dependence, and electron mobility (E-mobility) in the inversion layer, which controls the …