The effect of following processing parameters on the electrical and thermomechanical properties of Al/Si 3 N 4 deposited silica composites was investigated using the Taguchi …
Abstract Topaz (Al 2 F 1· 44 (OH) 0· 56 SiO 4)/corundum (Al 2 O 3) composites were prepared by a facile and novel reversible process from the sintering of synthetic topaz and …
The aim of this investigation was to synthesize Si3N4 through the reaction of nitrogen with SiF4 (g) produced during the thermal decomposition of sodium hexafluorosilicate (Na2SiF6) …
JL De la Pena, MI Pech-Canul - Ceramics international, 2007 - Elsevier
The kinetics of formation of Si2N2O and Si3N4 into Si porous preforms via chemical vapor infiltration (CVI) in N2 and N2–5% NH3, has been investigated. In addition, the effect of the …
In this work, stoichiometric silicon oxynitride (Si2N2O) has been successfully synthesized using a selective approach via hybrid precursor system-chemical vapor deposition …
AL Leal-Cruz, A Pérez-Aguirre… - Nanoscience and …, 2016 - researchgate.net
In this work, a synthesis route for 1D nanostructures (nanoribbons and nanofibers) of titanium oxide via hybrid precursor systems chemical vapor deposition (HYSYCVD) is …
Titania (TiO2) has attracted interest owing his potential applications as dosimetry material given his excellent optical, electrical, and thermal properties and the ability to shape his …
CVD silicon nitride (Si3N4) is typically produced from gas or liquid precursors containing nitrogen and silicon. The method using Na2SiF6 (s) as silicon solid precursor to produce …
The effects of flow rate, nitrogen precursor and diluent on the synthesis of S12N2O by the hybrid precursor chemical vapor deposition method (HYSYCVD) were investigated. Based …