The next-generation 5G and beyond-5G wireless systems have stimulated a substantial
growth in research, development, and deployment of mm-Wave electronic systems and …

Modern mobile communication signals require power amplifiers able to maintain very high
efficiency in a wide range of output power levels, which is a major issue for classical power …

A review is presented of key power amplifier (PA) performance requirements for millimeter-
wave 5G systems, along with a comparison of the potential of different semiconductor …

A single-stage, symmetric Doherty power amplifier (PA) in 45 nm CMOS silicon on insulator
at 28 GHz is presented. The PA achieves a saturated output power of 22.4 dBm, a peak …

We present the design and development of a Ka-band Doherty power amplifier (DPA) that
achieves high efficiency at power backoff (PBO) using a new load modulation scheme and a …

A two-stage Ka-band Doherty power amplifier (DPA) using a stacked field-effect transistor
(FET) cell is presented. We demonstrate, for the first time, the two critical parameters in a …

In this paper, we present the design of an ultracompact monolithic millimeter-wave
integrated circuit Doherty power amplifier (DPA) using a novel reconfigurable input network …

A two-stage, high-power symmetric Doherty power amplifier (PA) at 15 GHz is presented.
The PA is implemented in 45 nm CMOS silicon on insulator and achieves more than 23 dB …

With the increase in the demand for high-speed transmission communication, satellite
communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is …

In this article, a wideband linearization technique for distributed amplifiers (DAs) is
presented. In particular, an auxiliary transistor is employed to create additional …