[图书][B] Physics of semiconductors
M Grundmann - 2010 - Springer
Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …
have enabled economically reasonable fiber-based optical communication, optical storage …
[HTML][HTML] Optically thick GaInAs/GaAsP strain-balanced quantum-well tandem solar cells with 29.2% efficiency under the AM0 space spectrum
GaAs is often used as a multijunction subcell due to its high material quality on GaAs
substrates, despite having a non-optimal bandgap. The bandgap can be beneficially …
substrates, despite having a non-optimal bandgap. The bandgap can be beneficially …
Interplay between Structural and Thermoelectric Properties in Epitaxial Sb2+xTe3 Alloys
In recent years strain engineering is proposed in chalcogenide superlattices (SLs) to shape
in particular the switching functionality for phase change memory applications. This is …
in particular the switching functionality for phase change memory applications. This is …
Extended emission wavelength beyond 2.2 μm in strained multiple-quantum-well laser using InGaAsSb material grown on InP substrate
M Mitsuhara, W Kobayashi, T Shindo… - Applied Physics …, 2023 - pubs.aip.org
We report on the growth and lasing characteristics of 2.3%-compressive-strained InGaAsSb
multiple-quantum-well (MQW) lasers on InP substrates with emission wavelengths near 2.2 …
multiple-quantum-well (MQW) lasers on InP substrates with emission wavelengths near 2.2 …
Comparative study of defect levels in GaInNAs, GaNAsSb, and GaInNAsSb for high-efficiency solar cells
Background doping and defect levels in GaInNAs, GaNAsSb, and GaInNAsSb solar cells
with 1 eV band-gap are reported. Localized point defect induced traps were observed …
with 1 eV band-gap are reported. Localized point defect induced traps were observed …
Effect of bismuth surfactant on InP-based highly strained InAs/InGaAs triangular quantum wells
Y Gu, YG Zhang, XY Chen, SP Xi, B Du… - Applied Physics …, 2015 - pubs.aip.org
We report the effect of Bi surfactant on the properties of highly strained InAs/InGaAs
triangular quantum wells grown on InP substrates. Reduced surface roughness, improved …
triangular quantum wells grown on InP substrates. Reduced surface roughness, improved …
Enlarged growth window for plasmonic silicon-doped InAs using a bismuth surfactant
Semiconductors such as InAs with high dopant concentrations have a variety of applications,
including as components of mid-infrared optoelectronic devices. Unfortunately, growth of …
including as components of mid-infrared optoelectronic devices. Unfortunately, growth of …
[HTML][HTML] Characteristics of InGaAsBi with various lattice mismatches on InP substrate
To develop bismuth-containing infrared optoelectronic devices, InGaAsBi/InP films with
different lattice mismatches have been investigated. The lattice mismatch was tailored by …
different lattice mismatches have been investigated. The lattice mismatch was tailored by …
Critical layer thickness of GaIn (N) As (Sb) QWs on GaAs and InP substrates for (001) and (111) orientations
K Köksal, B Gönül, M Oduncuoğlu - The European Physical Journal B, 2009 - Springer
The aim of this work is to examine the effect of dilute nitride and/or antimonite on the critical
layer thickness of GaInAs quantum wells on GaAs and InP substrates by means of Matthews …
layer thickness of GaInAs quantum wells on GaAs and InP substrates by means of Matthews …
Surfactant-related growth of InAs1− xSbx quantum structures on InP (0 0 1) by metalorganic vapor-phase epitaxy
K Kawaguchi, M Ekawa, T Akiyama, H Kuwatsuka… - Journal of crystal …, 2006 - Elsevier
InAs1− xSbx quantum structures grown on InP (001) by metalorganic vapor-phase epitaxy
were investigated for a wide range of Sb content. InAs quantum dots (QDs) had an …
were investigated for a wide range of Sb content. InAs quantum dots (QDs) had an …