The physical and chemical properties of wide bandgap semiconductors silicon carbide and
diamond make these materials an ideal choice for device fabrication for applications in …

There has been substantial international research effort in the development of SiC
electronics over the last ten years. With promising applications in power electronics, hostile …

Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in
the field with this new cutting-edge resource. The book is your single source for in-depth …

Silicon carbide (SiC) offers significant advantages for power-switching devices because the
critical field for avalanche breakdown is about ten times higher than in silicon. SiC power …

Despite silicon carbide's (SiC's) high breakdown electric field, high thermal conductivity and
wide bandgap, it faces certain reliability challenges when used to make conventional power …

During the last 30 years, significant progress has been made to improve our understanding
of gallium nitride and silicon carbide device structures, resulting in experimental …

WIDE BANDGAP semiconductor, particularly Silicon Carbide (SiC), based electronic
devices and circuits are presently being developed for use in high-temperature, high-power …

We report here 20-kV-class small-area (0.035 mm 2) 4H-SiC bipolar junction transistors. We
implemented edge termination techniques featuring two-zone junction termination extension …

After many years of research and development, silicon carbide has emerged as one of the
most important wide band gap semiconductors. The first commercial SiC devices? power …

This paper presents the development of 1000 V, 30A bipolar junction transistor (BJT) with
high dc current gain in 4H-SiC. BJT devices with an active area of 3/spl times/3 mm/sup …