Methods for extracting the temperature-and power-dependent thermal resistance for SiGe and III-V HBTs from DC measurements: A review and comparison across …
M Müller, V d'Alessandro, S Falk… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Many different methods have been proposed in the literature for the extraction of the thermal
resistance of heterojunction bipolar transistors (HBTs). This review presents a detailed …
resistance of heterojunction bipolar transistors (HBTs). This review presents a detailed …
Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications
S Phillips, E Preisler, J Zheng… - 2021 IEEE BiCMOS …, 2021 - ieeexplore.ieee.org
A new generation of Tower Semiconductor's SBC18 SiGe BiCMOS process family is
introduced, SBC18H5, that features a baseline high-speed SiGe HBT with a peak f T of 285 …
introduced, SBC18H5, that features a baseline high-speed SiGe HBT with a peak f T of 285 …
Device modeling tools and their application to SiGe HBT development
M Schröter, M Müller… - 2022 IEEE BiCMOS and …, 2022 - ieeexplore.ieee.org
The enabling role of device simulation (TCAD) and compact modeling for the structural
optimization of SiGe HBTs during process development is discussed. It is shown that …
optimization of SiGe HBTs during process development is discussed. It is shown that …
Physical modeling of InP/InGaAs DHBTs with augmented drift-diffusion and Boltzmann transport equation solvers—Part I: Simulation tools and application to sample …
H Leenders, M Müller, C Jungemann… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The overall purpose of this work (including Part II in this issue) is to demonstrate the physical
modeling of InP/InGaAs double heterojunction bipolar transistors (DHBTs) using a …
modeling of InP/InGaAs double heterojunction bipolar transistors (DHBTs) using a …
Numerical device simulation aided study of RF-stress-caused degradation in SiGe HBTs
C Weimer, V Kazantsev, M Mäller… - 2023 IEEE BiCMOS …, 2023 - ieeexplore.ieee.org
TCAD simulations of an advanced SiGe HBT are performed with and without considering the
impact of compressive lattice strain on the effective density of states and on the carrier …
impact of compressive lattice strain on the effective density of states and on the carrier …
[HTML][HTML] Characterization and compact modeling of silicon-germanium heterojunction bipolar transistors from room to cryogenic temperatures
X Jin - 2024 - tud.qucosa.de
Kurzfassung Silizium-Germanium (SiGe) Heterojunction-Bipolartransistoren (HBTs) werden
aufgrund ihrer hohen Verstärkung und Geschwindigkeit sowie der Integration in die …
aufgrund ihrer hohen Verstärkung und Geschwindigkeit sowie der Integration in die …
Physics-Based Technology Computer-Aided Design and Compact Modeling with Special Emphasis on Advanced Indium-Phosphide Heterojunction Bipolar …
M Müller - 2024 - tud.qucosa.de
Kurzfassung Diese Arbeit untersucht die Kompakt-und rechnergestützte Entwurf für
Technologie (TCAD) Modellierung von Heterostruktur-Bipolartransistoren (HBTs) basierend …
Technologie (TCAD) Modellierung von Heterostruktur-Bipolartransistoren (HBTs) basierend …