Amorphous oxide semiconductors: From fundamental properties to practical applications
Amorphous oxide semiconductors (AOSs) have exceptional features of high visible
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
transparency, high carrier mobility, excellent uniformity, and low-temperature growth …
Structural and electronic properties with respect to Si doping in oxygen rich ZnSnO amorphous oxide semiconductor
The effect of Si doping in the presence of excess oxygen on the zinc-tin-oxide (ZTO) thin-film
transistor is investigated. The threshold voltage increases from 3.86 to 10.8 V, and the ON …
transistor is investigated. The threshold voltage increases from 3.86 to 10.8 V, and the ON …
A facile doping process of the organic inter-layer dielectric for self-aligned coplanar In-Ga-Zn-O thin-film transistors
HE Kim, M Furuta, SM Yoon - IEEE Electron Device Letters, 2020 - ieeexplore.ieee.org
A new doping technique to form the conductive source/drain regions of self-aligned coplanar
In-GaZn-O (IGZO) thin-film transistors (TFTs) was demonstrated. The electrical resistivity of …
In-GaZn-O (IGZO) thin-film transistors (TFTs) was demonstrated. The electrical resistivity of …
Work function effect of metal electrodes on the performance of amorphous Si–Zn–Sn–O thin-film transistors investigated by transmission line method
JW Kim, SY Lee - Journal of Materials Science: Materials in Electronics, 2024 - Springer
The electrical performance of amorphous Si–Zn–Sn–O (a-SZTO) thin-film transistors (TFTs)
with various source/drain (S/D) electrodes materials was studied. Total resistance (RT) and …
with various source/drain (S/D) electrodes materials was studied. Total resistance (RT) and …
Effect of surface treated amorphous Si–Zn–Sn–O on the electrical properties of thin film transistors by Ar plasma treatment
JW Kim, SY Lee - Journal of the Korean Ceramic Society, 2024 - Springer
Control of surface properties has been investigated by using Ar plasma treatment on
amorphous Si–Zn–Sn–O (a-SZTO) thin film. Various Ar plasma powers were used to verify …
amorphous Si–Zn–Sn–O (a-SZTO) thin film. Various Ar plasma powers were used to verify …
Realization of inverter and logic circuit using amorphous Si–In–Zn–O thin film transistor
JW Kim, SY Lee - Transactions on Electrical and Electronic Materials, 2021 - Springer
Depletion load type of logic circuits using only n-type amorphous Si–In–Zn–O (a-SIZO) as
channel material have been fabricated and used to analyze the threshold voltage (VTH) with …
channel material have been fabricated and used to analyze the threshold voltage (VTH) with …