Hardware security exploiting post-CMOS devices: fundamental device characteristics, state-of-the-art countermeasures, challenges and roadmap
Emerging nanoelectronic semiconductor devices have been quite promising in enhancing
hardware-oriented security and trust. However, implementing hardware security primitives …
hardware-oriented security and trust. However, implementing hardware security primitives …
Performance analysis of heterojunction tunnel FET device with variable temperature
In this paper, the analysis of SiGe source-based heterojunction Tunnel FET device is
reported. The parameters like transconductance (gm), device efficiency (gm/ID), gate-source …
reported. The parameters like transconductance (gm), device efficiency (gm/ID), gate-source …
Machine learning-based run-to-run control of a spatial thermal atomic layer etching reactor
In response to the next technological revolution, atomic layer processes have emerged to
produce high-performing, thin-film semiconductor materials. To overcome the long purging …
produce high-performing, thin-film semiconductor materials. To overcome the long purging …
Temperature analysis of Ge/Si heterojunction SOI-tunnel FET
Temperature is a thermal parameter which affects the device performance. This paper
presents the impact of the temperature variation on the electrical characteristics such as …
presents the impact of the temperature variation on the electrical characteristics such as …
Improvement of electrical characteristics of SiGe source based tunnel FET device
Abstract Tunnel Field Effect Transistor (TFET) is one of the most promising alternative device
for semiconductor technology and shows better performance as compared to the …
for semiconductor technology and shows better performance as compared to the …
The impact of a recessed Δ-shaped gate in a vertical CAVET AlGaN/GaN MIS-HEMT for high-power low-loss switching applications
A Danielraj, S Deb, A Mohanbabu… - Journal of Computational …, 2022 - Springer
A Δ-shaped gate GaN-based E-mode vertical current-aperture vertical electron transistor
(CAVET) device with a boron-doped current block layer (B-CBL) on an n+ GaN substrate is …
(CAVET) device with a boron-doped current block layer (B-CBL) on an n+ GaN substrate is …
Investigation of DC performance of Ge-source pocket silicon-on-insulator tunnel field effect transistor in nano regime
As devices are scaled down in nano regime the steepest subthreshold swing becomes the
most desirable characteristic for the improvement of the performance of devices. To address …
most desirable characteristic for the improvement of the performance of devices. To address …
Temperature analysis of DMGC CGAA FET for future deep space and military applications: an insight into Analog/RF/Self-Heating/Linearity
PK Mudidhe, BR Nistala - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
This manuscript introduces a pioneering investigation on the temperature effects of Dual
Material Graded Channel (DMGC) Cylindrical Gate All Around (CGAA) FET by outlining its …
Material Graded Channel (DMGC) Cylindrical Gate All Around (CGAA) FET by outlining its …
Simple and rapid gas sensing using a single-walled carbon nanotube field-effect transistor-based logic inverter
Single-walled carbon nanotubes (SWCNTs) are promising candidates for gas sensing
applications, providing an efficient solution to the device miniaturization challenge and …
applications, providing an efficient solution to the device miniaturization challenge and …
Impact of dielectric pocket on analog and high-frequency performances of cylindrical gate-all-around tunnel FETs
In this paper, a novel structure of cylindrical GAA-TFETs with high-k dielectric pocket is
proposed to improve the analog and high-frequency performances. We have discussed the …
proposed to improve the analog and high-frequency performances. We have discussed the …