X-ray diffraction of III-nitrides
MA Moram, ME Vickers - Reports on progress in physics, 2009 - iopscience.iop.org
The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV …
When group-III nitrides go infrared: New properties and perspectives
J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
Gallium indium nitride-based green lasers
D Sizov, R Bhat, CE Zah - Journal of lightwave technology, 2011 - ieeexplore.ieee.org
In this review article, we describe group-III nitride laser diodes that emit light in the green
spectral range, using epitaxial structures grown on gallium nitride (GaN) substrates with c …
spectral range, using epitaxial structures grown on gallium nitride (GaN) substrates with c …
High-power and high-efficiency InGaN-based light emitters
A Laubsch, M Sabathil, J Baur… - IEEE transactions on …, 2009 - ieeexplore.ieee.org
In this paper, we report on the latest advancements in improving AlGaInN-based visible-light-
emitting-diode (LED) efficiency in epitaxy, chip, and package designs. We investigate the …
emitting-diode (LED) efficiency in epitaxy, chip, and package designs. We investigate the …
Solid-state lighting
CJ Humphreys - MRS bulletin, 2008 - cambridge.org
Electricity generation is the main source of energy-related greenhouse gas emissions and
lighting uses one-fifth of its output. Solid-state lighting using light-emitting diodes (LEDs) is …
lighting uses one-fifth of its output. Solid-state lighting using light-emitting diodes (LEDs) is …
Composition of wide bandgap semiconductor materials and nanostructures measured by atom probe tomography and its dependence on the surface electric field
Atom probe tomography allows for three-dimensional reconstruction of the elemental
distribution in materials at the nanoscale. However, the measurement of the chemical …
distribution in materials at the nanoscale. However, the measurement of the chemical …
visible LEDs: more than efficient light
T Taki, M Strassburg - ECS Journal of Solid State Science and …, 2019 - iopscience.iop.org
The lighting sector has seen a tremendous technology revolution in the recent few decades.
This process has been fueled by light emitting diodes (LEDs), when group-III nitride …
This process has been fueled by light emitting diodes (LEDs), when group-III nitride …
The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes
The development of efficient green light-emitting diodes (LEDs) is of paramount importance
for the realization of colour-mixing white LEDs with a high luminous efficiency. While the …
for the realization of colour-mixing white LEDs with a high luminous efficiency. While the …
III-nitride optoelectronic devices containing wide quantum wells—unexpectedly efficient light sources
In this paper we review the recent studies on wide InGaN quantum wells (QWs). InGaN QWs
are known to suffer from an extremely high built-in piezoelectric polarization, which …
are known to suffer from an extremely high built-in piezoelectric polarization, which …
Microstructural origins of localization in InGaN quantum wells
The startling success of GaN-based light emitting diodes despite the high density of
dislocations found in typical heteroepitaxial material has been attributed to localization of …
dislocations found in typical heteroepitaxial material has been attributed to localization of …