Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
The monolithic integration of III-V compound semiconductor devices with silicon presents
physical and technological challenges, linked to the creation of defects during the deposition …
physical and technological challenges, linked to the creation of defects during the deposition …
[图书][B] Silicon, germanium, and their alloys: growth, defects, impurities, and nanocrystals
G Kissinger, S Pizzini - 2014 - books.google.com
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …
materials still demand research, eminently in view of the improvement of knowledge on …
Tensile strain mapping in flat germanium membranes
Scanning X-ray micro-diffraction has been used as a non-destructive probe of the local
crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal …
crystalline quality of a thin suspended germanium (Ge) membrane. A series of reciprocal …
High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry
A thin, flat, and single crystal germanium membrane would be an ideal platform on which to
mount sensors or integrate photonic and electronic devices, using standard silicon …
mount sensors or integrate photonic and electronic devices, using standard silicon …
Laser-vibrometric ultrasonic characterization of resonant modes and quality factors of Ge membranes
The vibrations of a single-crystal germanium (Ge) membrane are studied in air and vacuum
using laser vibrometry, in order to determine mechanical properties such as Q-factors …
using laser vibrometry, in order to determine mechanical properties such as Q-factors …
Micro and nanofabrication of SiGe/Ge bridges and membranes by wet-anisotropic etching
Germanium bridges and membranes have been fabricated by lithography and wet-
anisotropic chemical etching from SiGe/Ge heterostructures epitaxially deposited on Si …
anisotropic chemical etching from SiGe/Ge heterostructures epitaxially deposited on Si …
Non-linear vibrational response of Ge and SiC membranes
LQ Zhou, G Colston, MJ Pearce, RG Prince… - Applied Physics …, 2017 - pubs.aip.org
Characterisation of membranes produced for use as micro-electro-mechanical systems
using vibrational techniques can give a measure of their behaviour and suitability for …
using vibrational techniques can give a measure of their behaviour and suitability for …
[HTML][HTML] Strain mapping of silicon carbon suspended membranes
The alloy silicon carbon (Si 1-y C y) has various strain engineering applications. It is often
implemented as a dopant diffusion barrier and has been identified as a potential buffer layer …
implemented as a dopant diffusion barrier and has been identified as a potential buffer layer …
Electrical properties and strain distribution of Ge suspended structures
Germanium membranes and microstructures of 50–1000 nm thickness have been fabricated
by a combination of epitaxial growth on a Si substrate and simple etching processes. The …
by a combination of epitaxial growth on a Si substrate and simple etching processes. The …
Thermal isolation through nanostructuring
This chapter discusses the cooling of a platform, which requires the electronic coolers to
extract heat by coupling to phonons within the platform material. Major results obtained …
extract heat by coupling to phonons within the platform material. Major results obtained …