Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing

M Hellenbrand, J MacManus-Driscoll - Nano Convergence, 2023 - Springer
In the growing area of neuromorphic and in-memory computing, there are multiple reviews
available. Most of them cover a broad range of topics, which naturally comes at the cost of …

Noise-assisted persistence and recovery of memory state in a memristive spiking neuromorphic network

IA Surazhevsky, VA Demin, AI Ilyasov… - Chaos, solitons & …, 2021 - Elsevier
We investigate the constructive role of an external noise signal, in the form of a low-rate
Poisson sequence of pulses supplied to all inputs of a spiking neural network, consisting in …

Opportunity of the Lead-Free All-Inorganic Cs3Cu2I5 Perovskite Film for Memristor and Neuromorphic Computing Applications

F Zeng, Y Guo, W Hu, Y Tan, X Zhang… - … applied materials & …, 2020 - ACS Publications
Recently, several types of lead halide perovskites have been demonstrated as active layers
in resistive switching memory or artificial synaptic devices for neuromorphic computing …

Three-dimensional nanoscale flexible memristor networks with ultralow power for information transmission and processing application

TY Wang, JL Meng, MY Rao, ZY He, L Chen, H Zhu… - Nano …, 2020 - ACS Publications
To construct an artificial intelligence system with high efficient information integration and
computing capability like the human brain, it is necessary to realize the biological …

Low-dimensional-materials-based flexible artificial synapse: materials, devices, and systems

Q Lu, Y Zhao, L Huang, J An, Y Zheng, EH Yap - Nanomaterials, 2023 - mdpi.com
With the rapid development of artificial intelligence and the Internet of Things, there is an
explosion of available data for processing and analysis in any domain. However, signal …

Robust Ag/ZrO2/WS2/Pt Memristor for Neuromorphic Computing

X Yan, C Qin, C Lu, J Zhao, R Zhao… - … applied materials & …, 2019 - ACS Publications
The development of the information age has made resistive random access memory
(RRAM) a critical nanoscale memristor device (MD). However, due to the randomness of the …

Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse

M Ismail, C Mahata, S Kim - Journal of Alloys and Compounds, 2022 - Elsevier
Controllable multilevel resistive switching (RS) and neuromorphic characteristics emerges
as a promising paradigm to build power-efficient computing hardware for high density data …

Fluoropolymer-based organic memristor with multifunctionality for flexible neural network system

MH Kim, HL Park, MH Kim, J Jang, JH Bae… - npj Flexible …, 2021 - nature.com
In this study, we propose an effective strategy for achieving the flexible one organic
transistor–one organic memristor (1T–1R) synapse using the multifunctional organic …

Reliable organic memristors for neuromorphic computing by predefining a localized ion-migration path in crosslinkable polymer

HL Park, MH Kim, MH Kim, SH Lee - Nanoscale, 2020 - pubs.rsc.org
In flexible neuromorphic systems for realizing artificial intelligence, organic memristors are
essential building blocks as artificial synapses to perform information processing and …

Multi-level Cells and Quantized Conductance Characteristics of Al2O3-Based RRAM Device for Neuromorphic System

Y Lee, J Park, D Chung, K Lee, S Kim - Nanoscale Research Letters, 2022 - Springer
Recently, various resistance-based memory devices are being studied to replace charge-
based memory devices to satisfy high-performance memory requirements. Resistance …