Terahertz Plasmon Polaritons in Large Area Bi2Se3 Topological Insulators

V Pistore, L Viti, C Schiattarella… - Advanced Optical …, 2024 - Wiley Online Library
Assessing the nature of topological quantum materials, and in particular probing the
existence of topological surface states, is a very challenging task. Terahertz (THz) frequency …

Enhancing Thermoelectric and Cooling Performance of Bi0.5Sb1.5Te3 through Ferroelectric Polarization in Flexible Ag/PZT/PVDF/Bi0.5Sb1.5Te3 Film

C Li, W Li, C Sun, Z Ma, Y Wei, W Ma… - … Applied Materials & …, 2024 - ACS Publications
Bi2Te3-based thin films are gaining recognition for their remarkable room temperature
thermoelectric performance. Beyond the conventional “process–composition–performance” …

Spin‐Orbit Readout Using Thin Films of Topological Insulator Sb2Te3 Deposited by Industrial Magnetron Sputtering

S Teresi, N Sebe, J Patterson, T Frottier… - Advanced Functional …, 2023 - Wiley Online Library
Driving a spin‐logic circuit requires the production of a large output signal by spin‐charge
interconversion in spin‐orbit readout devices. This should be possible by using topological …

Side-jump scattering enhanced spin Hall effect in SrTiO3-implanted Pt

Z Lin, X Xu, L Zhang, J Wei, Z Zhong, X Tang… - Applied Physics …, 2023 - pubs.aip.org
A spin Hall effect (SHE) enables the electrical generation and detection of spin currents for
promising applications in spintronics, but heavy metals with low spin Hall angle θ SH limit …

Performance of Topological Insulator (Sb2Te3)-Based Vertical Stacking Photodetector on n-Si Substrate

SK Verma, K Kandpal, P Kumar… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this work, we report the photodetector properties of a vertically stacked heterostructure
based on topological insulator Sb 2 Te 3/n-Si. The high-quality Sb 2 Te 3 thin films were …

Planar Hall effect and magnetoresistance of epitaxial films

R Kumar, P Bajracharya, P Haghi Ashtiani, R Paxson… - Physical Review B, 2024 - APS
The measurements of anisotropic magnetoresistance (AMR), planar Hall effect (PHE) and
temperature-dependent conductivity in materials with strong spin-orbit coupling yield …

Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversion

E Longo, L Locatelli, P Tsipas, A Lintzeris… - … Applied Materials & …, 2023 - ACS Publications
Properly tuning the Fermi level position in topological insulators is of vital importance to
tailor their spin-polarized electronic transport and to improve the efficiency of any functional …

Electronic Structure and Transport Properties of Bi2Te3 and Bi2Se3 Single Crystals

VV Marchenkov, AV Lukoyanov, ST Baidak… - Micromachines, 2023 - mdpi.com
The electrical resistivity and the Hall effect of topological insulator Bi2Te3 and Bi2Se3 single
crystals were studied in the temperature range from 4.2 to 300 K and in magnetic fields up to …

Study on Bulk-Surface Transport Separation and Dielectric Polarization of Topological Insulator Bi1.2Sb0.8Te0.4Se2.6

Y Zheng, T Xu, X Wang, Z Sun, B Han - Molecules, 2024 - mdpi.com
This study successfully fabricated the quaternary topological insulator thin films of Bi1. 2Sb0.
8Te0. 4Se2. 6 (BSTS) with a thickness of 25 nm, improving the intrinsic defects in binary …

Topological Insulator Nanowires Made by AFM Nanopatterning: Fabrication Process and Ultra Low‐Temperature Transport Properties

DS Yakovlev, AV Frolov, IA Nazhestkin… - Advanced Physics …, 2024 - Wiley Online Library
Topological insulator nanostructures became an essential platform for studying novel
fundamental effects emerging at the nanoscale. However, conventional nanopatterning …