Radiative sky cooling: fundamental physics, materials, structures, and applications

X Sun, Y Sun, Z Zhou, MA Alam, P Bermel - Nanophotonics, 2017 - degruyter.com
Radiative sky cooling reduces the temperature of a system by promoting heat exchange with
the sky; its key advantage is that no input energy is required. We will review the origins of …

Emerging radiative materials and prospective applications of radiative sky cooling-A review

AS Farooq, P Zhang, Y Gao, R Gulfam - Renewable and Sustainable …, 2021 - Elsevier
The enhanced cooling performance and the reduced operational cost of the integrated
radiative sky coolers are essentially necessitated in a wide range of applications, such as …

A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical review

MA Alam, BK Mahajan, YP Chen, W Ahn… - … on Electron Devices, 2019 - ieeexplore.ieee.org
As foreseen by Keyes in the late 1960s, the self-heating effect has emerged as an important
concern for device performance, output power density, run-time variability, and reliability of …

Integrated modeling of self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern …

W Ahn, SH Shin, C Jiang, H Jiang, MA Wahab… - Microelectronics …, 2018 - Elsevier
The evolution of transistor topology from planar to confined geometry transistors (ie, FinFET,
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …

Characterization of self-heating leads to universal scaling of HCI degradation of multi-fin SOI FinFETs

H Jiang, SH Shin, X Liu, X Zhang… - 2016 IEEE International …, 2016 - ieeexplore.ieee.org
SOI FinFETs and other Gate-all-around (GAA) transistors topologies have excellent 3-D
electrostatic control and therefore, have been suggested as potential technology options for …

Self-heating and reliability-aware “intrinsic” safe operating Area of wide bandgap semiconductors—an analytical approach

BK Mahajan, YP Chen, N Zagni… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The emergence of several technology options and the ever-broadening range of
applications (eg, automotive, smart grids, solar/wind farms) for power electronic devices …

Performance potential of Ge CMOS technology from a material-device-circuit perspective

SH Shin, H Jiang, W Ahn, H Wu… - … on Electron Devices, 2018 - ieeexplore.ieee.org
Recently demonstrated CMOS circuits based on Ge nanowires (Ge-FET) promise sustained
technology scaling because higher mobility Ge guarantees target I ON at a lower V DD …

Spatio-temporal mapping of device temperature due to self-heating in Sub-22 nm transistors

MA Wahab, SH Shin, MA Alam - 2016 IEEE International …, 2016 - ieeexplore.ieee.org
With the increase of transistor density and adoption of novel geometries, such as, FinFET,
ETSOI, and gate-all-around nanowire (GAA NW) transistors, self-heating has emerged as a …

The Impact of Hot Carrier Injection-Induced Device Degradation for Lower-Power FinFETs

YL Chen, WK Yeh, HT Hsu, KH Chen, DH Lien… - Journal of Electronic …, 2023 - Springer
The impact of hot carrier injection (HCI) on the performance of standard and low-VT FinFETs
are investigated and benchmarked with each other. For this investigation, these FinFETs …

Sub-diffraction thermoreflectance thermal imaging using image reconstruction

A Ziabari, Y Xuan, JH Bahk, M Parsa… - 2017 16th IEEE …, 2017 - ieeexplore.ieee.org
Thermoreflectance thermal imaging technique uses light in the visible wavelength range
and has a diffraction limit of∼ 250nm. Despite that TR is still capable of acquiring …