The optical properties of luminescence centres in silicon

G Davies - Physics reports, 1989 - Elsevier
Over one hundred independent photoluminescence transitions are now known in crystalline
silicon. This paper begins by outlining those properties of silicon which are relevant to …

Photoluminescence spectroscopy of crystalline semiconductors

GD Gilliland - Materials Science and Engineering: R: Reports, 1997 - Elsevier
The objective of this review article is to give an overview of the current state-of-the-art of
photoluminescence (PL) spectroscopy as a characterization tool in the study of …

[图书][B] Optical characterization of semiconductors: infrared, Raman, and photoluminescence spectroscopy

S Perkowitz - 2012 - books.google.com
This is the first book to explain, illustrate, and compare the most widely used methods in
optics: photoluminescence, infrared spectroscopy, and Raman scattering. Written with non …

The solid state physics programme at ISOLDE: Recent developments and perspectives

K Johnston, J Schell, JG Correia… - Journal of Physics G …, 2017 - iopscience.iop.org
Solid state physics (SSP) research at ISOLDE has been running since the mid-1970s and
accounts for about 10%–15% of the overall physics programme. ISOLDE is the world …

Silicon as an emissive optical medium

JM Shainline, J Xu - Laser & Photonics Reviews, 2007 - Wiley Online Library
One of the great challenges in photonics has been to modify silicon to enhance light
emission properties. In this review article we survey recent studies which have generated …

Photoluminescence of deep defects involving transition metals in Si: New insights from highly enriched 28Si

M Steger, A Yang, T Sekiguchi, K Saeedi… - Journal of Applied …, 2011 - pubs.aip.org
Deep luminescence centers in Si associated with transition metals have been studied for
decades, both as markers for these deleterious contaminants, as well as for the possibility of …

Optical emission at 1.32 μm from sulfur-doped crystalline silicon

TG Brown, DG Hall - OSA Annual Meeting, 1986 - opg.optica.org
The radiative decay of excitons bound to isoelectronic impurities is an important physical
process in crystalline semiconductors. This is particularly true in indirect band gap materials …

Microring resonator-coupled photoluminescence from silicon W centers

AN Tait, SM Buckley, J Chiles… - Journal of Physics …, 2020 - iopscience.iop.org
Silicon defect centers are promising candidates for waveguide-integrated silicon light
sources. We demonstrate microresonator-and waveguide-coupled photoluminescence from …

Electronic structure of bound excitons in semiconductors

B Monemar, U Lindefelt, WM Chen - Physica B+ C, 1987 - Elsevier
Some recent advances in the understanding of the electronic structure of bond excitons (BE:
s) in semiconductors are discussed, with the emphasis on properties of complex defects or …

A new photoluminescence band in silicon lightly doped with copper

KG McGuigan, MO Henry, EC Lightowlers… - Solid state …, 1988 - Elsevier
A new photoluminescence band is reported for silicon lightly doped with copper. The
spectrum consists of five closely spaced zero-phonon lines, with the lowest energy …