While non-nitride III-V semiconductors typically have a zinc-blende structure, they may also
form wurtzite crystals under pressure or when grown as nanowhiskers. This makes …

I? rst heard of k· p in a course on semiconductor physics taught by my thesis adviser William
Paul at Harvard in the fall of 1956. He presented the k· p Hamiltonian as a semiempirical …

We investigate exciton states theoretically in strained GaN/AlN quantum dots with wurtzite
(WZ) and zinc-blende (ZB) crystal structures, as well as strained WZ GaN/AlGaN quantum …

Crystal orientation effects on electronic properties of wurtzite InGaN/GaN quantum wells
(QWs) with piezoelectric (PZ) and spontaneous (SP) polarization are investigated using the …

Electronic and optical properties of a-(∅= 0) and 𝔪-plane (∅-π/6) InGaN-GaN quantum-well
(QW) structures are investigated using the multiband effective-mass theory with an arbitrary …

We derive a nonsymmetrized eight-band effective-mass Hamiltonian for quantum dot
heterostructures (QDH's) in Burt's envelope-function representation. The 8× 8 radial …

Optical properties of staggered 530 nm InGaN/InGaN/GaN quantum-well (QW) light-emitting-
diodes are investigated using the multiband effective mass theory. These results are …

Optical gain characteristics of In Ga N∕ Ga N double quantum well (QW) structures with
embedded AlGaN δ layer are investigated using the multiband effective mass theory. These …

A microscopic model, based on a full-Brillouin-zone description of the electronic structure, is
used to investigate Auger transitions in InGaN/GaN quantum wells. The lack of momentum …

Metal-semiconductor nanostructures represent an important new class of materials
employed in designing advanced optoelectronic and nanophotonic devices, such as …