P‐Type 2D Semiconductors for Future Electronics

Y Xiong, D Xu, Y Feng, G Zhang, P Lin… - Advanced …, 2023 - Wiley Online Library
Abstract 2D semiconductors represent one of the best candidates to extend Moore's law for
their superiorities, such as keeping high carrier mobility and remarkable gate‐control …

Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics

L Lv, J Yu, M Hu, S Yin, F Zhuge, Y Ma, T Zhai - Nanoscale, 2021 - pubs.rsc.org
Owing to their superior carrier mobility, strong light–matter interactions, and flexibility at the
atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for …

High-performance self-powered photodetectors achieved through the pyro-phototronic effect in Si/SnOx/ZnO heterojunctions

JPB Silva, EMF Vieira, K Gwozdz, A Kaim… - Nano Energy, 2021 - Elsevier
Coupling together the pyroelectric effect and the photovoltaic effect is a novel method to
significantly enhance the performance of photodetectors. In this work, we make use of this …

Highly Nonlinear Memory Selectors with Ultrathin MoS2/WSe2/MoS2 Heterojunction

H Chen, T Wan, Y Zhou, J Yan, C Chen… - Advanced Functional …, 2024 - Wiley Online Library
Resistive random access memory (RRAM) crossbar arrays require the highly nonlinear
selector with high current density to address a specific memory cell and suppress leakage …

WS2/GeSe/WS2 Bipolar Transistor-Based Chemical Sensor with Fast Response and Recovery Times

AM Afzal, MZ Iqbal, G Dastgeer, G Nazir… - … applied materials & …, 2020 - ACS Publications
Vertical heterostructures of transition-metal dichalcogenide semiconductors have attracted
considerable attention and offer new opportunities in electronics and optoelectronics for the …

Nanoscale electronic devices based on transition metal dichalcogenides

W Zhu, T Low, H Wang, P Ye, X Duan - 2D Materials, 2019 - iopscience.iop.org
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) have very versatile
chemical, electrical and optical properties. In particular, they exhibit rich and highly tunable …

2D materials for intelligent devices

X Pan, Y Li, B Cheng, SJ Liang, F Miao - Science China Physics …, 2023 - Springer
Neuromorphic intelligent hardware technologies have undergone rapid advancement
during the past decade, with the goal of building intelligent devices and systems capable of …

Synergistically enhanced performance and reliability of abrupt metal‐oxide heterojunction transistor

P Wang, H Yang, J Li, X Zhang, L Wang… - Advanced Electronic …, 2023 - Wiley Online Library
The large‐area low‐temperature processing capability and versatile characteristics of
amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to …

Recessed-Channel WSe2 Field-Effect Transistor via Self-Terminated Doping and Layer-by-Layer Etching

D Lee, Y Choi, J Kim, J Kim - ACS nano, 2022 - ACS Publications
Effective channel control with low contact resistance can be accomplished through selective
ion implantation in Si and III–V semiconductor technologies; however, this approach cannot …

2D Cu9S5/PtS2/WSe2 Double Heterojunction Bipolar Transistor with High Current Gain

S Yang, L Pi, L Li, K Liu, K Pei, W Han… - Advanced …, 2021 - Wiley Online Library
Bipolar junction transistor (BJT) as one important circuit element is now widely used in high‐
speed computation and communication for its capability of high‐power signal amplification …