Bulk II-VI and III-V single-crystal semiconductors provide an appealing coupling of chemical,
electrical, and optical properties that can be exploited in the design of chemical sensors. The …

Experimental studies of chalcogenide passivation (by sulfur and selenium atoms) of III–V
semiconductor surfaces are analyzed. The characteristic features of chemical-bond …

We present a review of semiconductor surface reconstruction. Experimental and theoretical
results on atomic geometry, electronic states, phonon modes, and bonding are presented for …

The reactivity of arsenopyrite (FeAsS) fractured surfaces toward oxygen was studied using
synchrotron radiation excited photoelectron spectroscopy (SXPS). The spectra of the pristine …

A high resolution synchrotron radiation core level photoemission study of the native oxides
on In 0.53 Ga 0.47 As was carried out in order to determine the various oxidation states …

The passivation of III–V semiconductor materials with sulphur is widely reported to reduce
interface state defects and improve semiconductor device performance. The most common …

Проведен анализ работ, посвященных халькогенидной пассивации (атомами серы и
селена) поверхности полупроводников AIIIBV. Рассмотрены особенности …

The relationship between the surface states related to nitrogen-vacancy defects and surface
Fermi level pinning has been investigated using x-ray photoelectron spectroscopy and …

By using capacitance–voltage and photoluminescence measurements, we have
investigated the Schottky barrier height and surface state density of Ni/Au contacts to n-type …

The possibilities of controlling the surface electronic properties of III–V semiconductors by
varying the adsorption chemistry are analyzed. Variations of the adsorption process …