GaN/Al 0.20 Ga 0.80 N/GaN heterostructures were grown by molecular beam epitaxy and
fabricated into micro-Hall effect sensors for the purpose of simultaneous current and …

This paper presents a new technique for continuously calibrating the sensitivity of a current
measurement microsystem based on a Hall magnetic field sensor. An integrated reference …

The calibration of multisensor systems can cause significant costs in terms of time and
resources, in particular when cross-sensitivities to parasitic influences are to be …

For the first time, Bayesian sensor calibration is used to identify efficient calibration
procedures for a sensor cross-sensitive to two parasitic influences. The object under study is …

This paper reports a novel multidimensional complementary metal-oxide semiconductor
(CMOS) based stress sensor. The device uses an octagonal n-well in a p-substrate and …

A residual offset lower than 0.2 mT is obtained with a CMOS integrated vertical Hall (VH)-
sensor microsystem. Instead of the conventional design with five contacts in the sensor …

Publisher Summary This chapter discusses recent progress in the most frequently used
magnetic-field microsensors and microelectromechanical systems (MEMS), which are …

This study investigates the origin of the offset voltage of five-contact vertical Hall sensors (5C-
VHS) by modeling these devices as a simple lumped resistor circuit. The model with the …

The Hall-effect magnetic sensors suffer from large offset that is described by the resistance
mismatch in the Wheatstone bridge-like equivalent electrical circuit model of the Hall plate …

Abstract 4H‐SiC is a key enabler for realizing integrated electronics operating in harsh
environments, which exhibit very high temperatures. Through advances in 4H‐SiC process …