[HTML][HTML] From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction
In this review the effect of the growth process on the formation of defects in the hetero-
epitaxial 3C-SiC film and the possible path for defects reduction has been reported. In our …
epitaxial 3C-SiC film and the possible path for defects reduction has been reported. In our …
Defect inspection techniques in SiC
With the increasing demand of silicon carbide (SiC) power devices that outperform the
silicon-based devices, high cost and low yield of SiC manufacturing process are the most …
silicon-based devices, high cost and low yield of SiC manufacturing process are the most …
Experimental and ab initio study of enhanced resistance to amorphization of nanocrystalline silicon carbide under electron irradiation
The crystalline-to-amorphous transition in nanocrystalline silicon carbide (ncSiC) has been
studied using 1.25 MeV electron irradiation. When compared to literature values for single …
studied using 1.25 MeV electron irradiation. When compared to literature values for single …
Carbonization and transition layer effects on 3C-SiC film residual stress
R Anzalone, G Litrico, N Piluso, R Reitano… - Journal of Crystal …, 2017 - Elsevier
In this work an extended study of the carbonization process of the silicon surface and of a
low temperature transition layer in the temperature rump on the 3C-SiC epitaxial growth has …
low temperature transition layer in the temperature rump on the 3C-SiC epitaxial growth has …
Ultra‐fast fabrication of< 110>‐oriented β‐SiC wafers by halide CVD
Φ80 mm‐diameter, highly< 110>‐oriented β‐SiC wafers were ultra‐fast fabricated via halide
chemical vapor deposition (CVD) using tetrachlorosilane (SiCl4) and methane (CH 4) as …
chemical vapor deposition (CVD) using tetrachlorosilane (SiCl4) and methane (CH 4) as …
Optimization of a buffer layer for cubic silicon carbide growth on silicon substrates
A procedure for the optimization of a 3C–SiC buffer layer for the deposition of 3C–SiC/(001)
Si is described. After a standard carbonization at 1125° C, SiH 4 and C 3 H 8 were added to …
Si is described. After a standard carbonization at 1125° C, SiH 4 and C 3 H 8 were added to …
Low temperature hetero‐epitaxial growth of 3C‐SiC films on Si utilizing microwave plasma CVD
H Zhuang, L Zhang, T Staedler… - Chemical Vapor …, 2013 - Wiley Online Library
Microwave plasma (MW) CVD is used for the first time in the low‐temperature, hetero‐
epitaxial growth of 3C‐SiC films on Si using a gas mixture of tetramethylsilane (TMS) and …
epitaxial growth of 3C‐SiC films on Si using a gas mixture of tetramethylsilane (TMS) and …
3C-SiC film growth on Si substrates
The aim of this work is to give an overview on 3C-SiC growth on Si substrates. Starting from
the reasons why SiC is considered such an interesting innovative material, with a survey of …
the reasons why SiC is considered such an interesting innovative material, with a survey of …
Three-Dimensional Nondestructive Characterization of Extrinsic Frank-Type Stacking Faults in 4H-SiC Crystals
M Wang, M Wei, Y Li, Y Li, Q Li, H Li… - Crystal Growth & …, 2024 - ACS Publications
The luminescence detection technique is one of the most commonly used NDT techniques
for detecting stacking faults in 4H-SiC crystals. Commonly used detection methods, such as …
for detecting stacking faults in 4H-SiC crystals. Commonly used detection methods, such as …
Coherent Fourier Scatterometry for detection of killer defects on silicon carbide samples
J Rafighdoost, D Kolenov… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
It has been a widely growing interest in using silicon carbide (SiC) in high-power electronic
devices. Yet, SiC wafers may contain killer defects that could reduce fabrication yield and …
devices. Yet, SiC wafers may contain killer defects that could reduce fabrication yield and …