Light effect characterization of ISFET based pH sensor with Si3N4 gate insulator
NIM Noh, KA Yusof, AZ Abdullah… - … IEEE Symposium on …, 2014 - ieeexplore.ieee.org
The performance of ISFET based pH sensor device in testing and characterization process
of light effect has been successfully done. The experimental setup was carried out by Agilent …
of light effect has been successfully done. The experimental setup was carried out by Agilent …
Enhancement of CHEMFET sensor selectivity based on backpropagation algorithm
In this study, a method to improve selectivity of chemically field-effect transistor (CHEMFET)
sensor towards the main ion concentration in mixed solution is discussed. The approach is …
sensor towards the main ion concentration in mixed solution is discussed. The approach is …
Influence of TEOS/Si3N4 passivation layer on the performance of MOSFET/ISFET structure
NIM Noh, KA Yusof, AZ Abdullah… - 2013 IEEE 4th …, 2013 - ieeexplore.ieee.org
This paper presents an investigation of dual passivation layer deposition on the
characteristic of MOSFET/ISFET structure. PECVD TEOS oxide and LPCVD Silicon nitride …
characteristic of MOSFET/ISFET structure. PECVD TEOS oxide and LPCVD Silicon nitride …
Hardware implementation of backpropagation algorithm based on CHEMFET sensor selectivity
N Abd Aziz, MAKA Latif, WFH Abdullah… - … on Control System …, 2013 - ieeexplore.ieee.org
In this study, modeling approach for interpretation of data logged from chemically field-effect
transistor (CHEMFET) sensor is described. Firstly, backpropagation algorithm is used to train …
transistor (CHEMFET) sensor is described. Firstly, backpropagation algorithm is used to train …
Effect of source-drain metal shield in FET structure on drain leakage current
This study presents the effect of source-drain metal shield in FET structure on drain leakage
current. The FET structure was fabricated on the wafer by using MIMOS's standard …
current. The FET structure was fabricated on the wafer by using MIMOS's standard …