Optimizing the light penetration depth in APDs and SPADs for high gain-bandwidth and ultra-wide...

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[HTML][HTML] Characterization of small single photon avalanche diode fabricated using standard 180 nm CMOS process for digital SiPM

J Oh, H Jeong, MS Lee, I Kwon - Nuclear Engineering and Technology, 2024 - Elsevier
In this work, single photon avalanche diodes (SPADs) were fabricated using the standard
180 nm complementary metal-oxide semiconductor process. Their small size of 15–16 μ m …
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