Gate and base drivers for silicon carbide power transistors: An overview
D Peftitsis, J Rabkowski - IEEE Transactions on Power …, 2015 - ieeexplore.ieee.org
Silicon carbide (SiC) power transistors have started gaining significant importance in various
application areas of power electronics. During the last decade, SiC power transistors were …
application areas of power electronics. During the last decade, SiC power transistors were …
High-temperature silicon carbide: characterization of state-of-the-art silicon carbide power transistors
CM DiMarino, R Burgos… - IEEE Industrial Electronics …, 2015 - ieeexplore.ieee.org
For several decades, silicon (Si) has been the primary semiconductor choice for power
electronic devices. During this time, the development and fabrication of Si devices has been …
electronic devices. During this time, the development and fabrication of Si devices has been …
State of art of current and future technologies in current limiting devices
Fuses and Circuit Breakers play an important safety role in electrical distribution systems.
New challenging applications, especially in DC applications, have brought conventional …
New challenging applications, especially in DC applications, have brought conventional …
Comparison between 1.7 kV SiC SJT and MOSFET power modules
In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor
(SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device …
(SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device …
DC modeling and geometry scaling of SiC low-voltage MOSFETs for integrated circuit design
This paper presents the SPICE model development of the static characteristics of silicon
carbide (SiC) lateral n-channel and p-channel MOSFETs based on the widely used BSIM4 …
carbide (SiC) lateral n-channel and p-channel MOSFETs based on the widely used BSIM4 …
High temperature characterization and analysis of silicon carbide (SiC) power semiconductor transistors
CM DiMarino - 2014 - vtechworks.lib.vt.edu
This thesis provides insight into state-of-the-art 1.2 kV silicon carbide (SiC) power
semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally …
semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally …
Advanced SiC Power MOSFETs Manufactured on 150mm SiC Wafers
K Matocha, S Banerjee, K Chatty - Materials Science Forum, 2016 - Trans Tech Publ
An advanced silicon carbide power MOSFET process was developed and implemented on a
high-volume 150mm silicon production line. SiC power MOSFETs fabricated on this 150mm …
high-volume 150mm silicon production line. SiC power MOSFETs fabricated on this 150mm …
Electrothermal modeling and characterization of SiC Schottky and silicon PiN diodes switching transients
Schottky diodes are known to have lower conduction and switching losses compared to PiN
diodes, however, are prone to ringing in the output characteristics. In this paper, analytical …
diodes, however, are prone to ringing in the output characteristics. In this paper, analytical …
Proportional regenerative base driver circuit with negative offstate voltage for sic bipolar junction transistors
N McNeill, B Jin, X Yuan - 2016 - IET
A proportional base driver circuit for SiC bipolar junction transistors is presented. A current
transformer feeds a proportion of the transistor's collector current into its base. The influence …
transformer feeds a proportion of the transistor's collector current into its base. The influence …
Power device platforms
HA Mantooth - Extreme Environment Electronics, 2017 - taylorfrancis.com
Silicon power device technology has matured to a point where it has largely achieved its
theoretical limits. The development of diode, MOSFET, insulated gate bipolar transistors …
theoretical limits. The development of diode, MOSFET, insulated gate bipolar transistors …