[PDF][PDF] High-speed visible light communication based on micro-LED: A technology with wide applications in next generation communication

T Lu, X Lin, W Guo, CC Tu, S Liu, CJ Lin… - Opto-Electronic …, 2022 - researching.cn
The evolution of next-generation cellular networks is aimed at creating faster, more reliable
solutions. Both the next-generation 6G network and the metaverse require high transmission …

Demonstration of high efficiency cascaded blue and green micro-light-emitting diodes with independent junction control

P Li, H Li, Y Yao, H Zhang, C Lynsky, KS Qwah… - Applied Physics …, 2021 - pubs.aip.org
We demonstrate efficient cascaded blue/green micro-size light-emitting diodes (μLEDs) with
independent junction control. The cascaded μLEDs, consisted of blue μLEDs, a tunnel …

High polarization and fast modulation speed of dual wavelengths electroluminescence from semipolar (20-21) micro light-emitting diodes with indium tin oxide surface …

H Zhang, P Li, H Li, J Song, S Nakamura… - Applied Physics …, 2020 - pubs.aip.org
We present highly polarized dual wavelength semipolar InGaN micro-light-emitting diodes
(μLEDs) by combining an indium tin oxide (ITO) surface grating and Al-coated dual-color …

Hybrid tunnel junction enabled independent junction control of cascaded InGaN blue/green micro-light-emitting diodes

P Li, H Li, Y Yao, KS Qwah, M Iza, JS Speck… - Optics …, 2023 - opg.optica.org
We demonstrate vertical integration of nitride-based blue/green micro-light-emitting diodes
(µLEDs) stacks with independent junctions control using hybrid tunnel junction (TJ). The …

[HTML][HTML] Performance Improvement of Amorphous Ga2O3/P-Si Deep Ultraviolet Photodetector by Oxygen Plasma Treatment

J Cao, L Chen, X Chen, Y Zhu, J Dong, B Wang, M He… - Crystals, 2021 - mdpi.com
Gallium oxide (Ga2O3) is an attractive semiconductor that is very suitable for deep ultraviolet
(DUV) inspection. However, due to the existence of many types of oxygen vacancies in the …

Fully transparent metal organic chemical vapor deposition-grown cascaded InGaN micro-light-emitting diodes with independent junction control

P Li, H Li, Y Yao, H Zhang, C Lynsky, KS Qwah… - Optics …, 2021 - opg.optica.org
In this work, we present fully transparent metal organic chemical vapor deposition (MOCVD)-
grown InGaN cascaded micro-light-emitting diodes (µLEDs) with independent junction …

[HTML][HTML] Effects of Buffer Layer on Structural Properties of Nonpolar (11 2¯ 0)-Plane GaN Film

J Zhao, B Suo, R Xu, T Tao, Z Zhuang, B Liu, X Zhang… - Crystals, 2023 - mdpi.com
Nonpolar (11 2¯ 0) a-plane GaN films were grown on semipolar (1 1¯ 02) r-plane sapphire
substrates using various buffer layers within a low-pressure metal organic chemical vapor …

Comparative investigation into polarization field-dependent internal quantum efficiency of semipolar InGaN green light-emitting diodes: A strategy to mitigate green …

S Roy, SMT Ahsan, AH Howlader, D Kundu… - Materials Today …, 2022 - Elsevier
Semipolar InGaN-made green light-emitting diodes (LEDs) have sparked tremendous
interest within the photonics community in recent past as advantageous replacements for …

Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films

K Chen, J Zhao, Y Ding, W Hu, B Liu, T Tao… - Chinese …, 2023 - iopscience.iop.org
Abstract Nonpolar (11–20) a-plane p-type GaN films were successfully grown on r-plane
sapphire substrate with the metal–organic chemical vapor deposition (MOCVD) system. The …

A linearly polarized light emission with a composite nanowire grating in whole white band

M Li, Y Li, N Zou, J Wu, X Bo, J Chu - Physica Scripta, 2024 - iopscience.iop.org
To obtain a highly linearly polarized light, a composite model consisting of white light
emission, anti-reflection film, and metal-dielectric-metal nanowire grating was designed …