High-sensitivity avalanche photodiodes (APDs) are used to amplify weak optical signals in a
wide range of applications, including telecommunications, data centers, spectroscopy …

Digital alloy AlInAsSb avalanche photodiodes exhibit low excess noise comparable to those
fabricated from Si. The electron and hole ionization coefficients are critical parameters for …

Digital alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44, random alloy Al 0.85 Ga 0.15 As 0.56 Sb 0.44,
and random alloy Al 0.79 In 0.21 As 0.74 Sb 0.26 are promising candidates for the …

A Si-Ge waveguide avalanche photodiode with extremely high temperature stability is
demonstrated. The breakdown voltage increases∼ 4.2 mV/° C, bandwidth reduces∼ …

We report Al 0.8 In 0.2 As 0.23 Sb 0.77 avalanche photodiodes with high gain (M> 1300)
and low dark current at room temperature. Impact ionization coefficients for this material …

The temperature dependence of the ionization coefficients of AlAsSb has been determined
from 210 K to 335 K by measuring the avalanche multiplication in a series of three p+-in+ …

The InGaAs lattice-matched to InP has been widely deployed as the absorption material in
short-wavelength infrared photodetection applications such as imaging and optical …

III-V on silicon avalanche photodiodes by heteroepitaxy clickable element to expand a topic
LOGIN OR CREATE ACCOUNT PRISM SUBMISSION This website uses cookies to deliver …

We report on a high-performance mid-wavelength infrared avalanche photodetector (APD)
with separate absorption and multiplication regions. InAs is used as the absorber material …

The dark current of a photodetector is a key parameter for high-sensitivity optical receivers.
We report low-dark-current, triple-mesa avalanche photodiodes that have~ 50 times lower …