Processes are provided herein for deposition of organic films. Organic films can be
deposited, including selective deposition on one surface of a substrate relative to a second …

Methods and apparatus for vapor deposition of an organic film are configured to vaporize an
organic reactant at a first temperature, transport the vapor to a reaction chamber housing a …

Methods are provided for selectively depositing a material on a first metal or metallic surface
of a substrate relative to a second, dielectric surface of the substrate, or for selectively …

2006/0141155 A1 2006/0176559 Al 2006/0199399 A1 2006/0226409 A1 2006/0292845 Al
2007/0014919 Al 2007/0026654 Al 2007/0063317 Al 2007/0099422 Al 2007/0241390 A1 …

(57) ABSTRACT A method for forming a film with an annealing step and a deposition step is
disclosed. The method comprises an annealing step for inducing self-assembly or alignment …

Methods for selectively depositing oxide thin films on a dielectric surface of a substrate
relative to a metal surface are provided. The methods can include at least one plasma …

Vapor deposition processes are provided in which a material is selectively deposited on a
first surface of a substrate relative to a second organic surface. In some embodiments a …

Methods for selective deposition, and structures thereof, are provided. Material is selectively
deposited on a first surface of a substrate relative to a second surface of a different material …

Methods and apparatus for vapor deposition of an organic film are configured to vaporize an
organic reactant at a first temperature, transport the vapor to a reaction chamber housing a …

Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize
deposits while depositing on a substrate housed therein, or on particular substrate surfaces …