Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …
expanding into other application areas including digital and quantum computing electronics …
GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices
N Wu, Z Xing, S Li, L Luo, F Zeng… - … Science and Technology, 2023 - iopscience.iop.org
Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
speed and energy efficiency—which can make it difficult to meet the increasing demand for …
Boosted high-temperature electrical characteristics of AlGaN/GaN HEMTs with rationally designed compositionally graded AlGaN back barriers
Abstract Wide bandgap GaN-based HEMTs have shown great potential as key components
in various power electronic systems but still face challenges in the pursuit of devices with …
in various power electronic systems but still face challenges in the pursuit of devices with …
Analysis of channel length, gate length and gate position optimization of III-Nitride/β-Ga2O3 Nano-HEMT for high-power nanoelectronics and terahertz applications
This research article reports the investigation of performance optimization of the field-plated
and recessed gate III-Nitride nano-HEMT on β-Ga 2 O 3 substrate. The optimization is done …
and recessed gate III-Nitride nano-HEMT on β-Ga 2 O 3 substrate. The optimization is done …
Voltage-margin limiting mechanisms of AlScN-based HEMTs
In this work, the off-state characteristics of AlScN/GaN high electron mobility transistors
(HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) were studied and …
(HEMTs) grown by metalorganic chemical vapor deposition (MOCVD) were studied and …
First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm− 1 output power density
S Ozaki, J Yaita, A Yamada, Y Kumazaki… - Applied Physics …, 2021 - iopscience.iop.org
In this letter, we successfully achieved high-power radio frequency (RF) operation of
AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on free-standing AlN …
AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on free-standing AlN …
Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier
The DC and RF capability of GaN high electron mobility transistor (HEMT) was enhanced by
incoorporating BGaN back barrier (BB). Different types of back barriers like AlGaN, BGaN …
incoorporating BGaN back barrier (BB). Different types of back barriers like AlGaN, BGaN …
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability
Application of gallium nitride high-electron-mobility transistors (GaN HEMTs) to millimeter-
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
wave power amplifiers requires gate length scaling below 150 nm: in order to control short …
Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications
In this work, a recessed gate AlGaN/AlN/GaN HEMT (high electron mobility transistor) on β-
Ga2O3 substrate is proposed using a field-plate mechanism and compared with a recessed …
Ga2O3 substrate is proposed using a field-plate mechanism and compared with a recessed …
Impact of the Channel Thickness on Electron Confinement in MOCVD‐Grown High Breakdown Buffer‐Free AlGaN/GaN Heterostructures
DY Chen, KH Wen, M Thorsell… - … status solidi (a), 2023 - Wiley Online Library
The 2D electron gas (2DEG) confinement on high electron mobility transistor (HEMT)
heterostructures with a thin undoped GaN channel layer on the top of a grain‐boundary‐free …
heterostructures with a thin undoped GaN channel layer on the top of a grain‐boundary‐free …