Nanoelectronic devices based on 2D materials are far from delivering their full theoretical
performance potential due to the lack of scalable insulators. Amorphous oxides that work …

Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have
emerged as highly promising for new electronic technologies. However, a key challenge in …

Abstract Two-dimensional (2D) materials hold great promise for future nanoelectronics as
conventional semiconductor technologies face serious limitations in performance and power …

Memristive systems offer biomimetic functions that are being actively explored for energy‐
efficient neuromorphic circuits. In addition to providing ultimate geometric scaling limits, 2D …

The proliferation of van der Waals (vdW) heterostructures formed by stacking layered
materials can accelerate scientific and technological advances. Here, we report a strategy …

Effective channel control with low contact resistance can be accomplished through selective
ion implantation in Si and III–V semiconductor technologies; however, this approach cannot …

Because of the intrinsic low carrier density of monolayer two-dimensional (2D) materials,
doping is crucial for the performance of underlap top-gated 2D devices. However, wet …

For the integration of two-dimensional (2D) transition metal dichalcogenides (TMDC) with
high-performance electronic systems, one of the greatest challenges is the realization of …

As two-dimensional (2D) electronic devices continue to advance, the need for integrating
high-quality, high-κ nanoscale dielectrics becomes more essential. Plasma-enhanced …

Metal contacts to MoS2 field-effect transistors (FETs) play a determinant role in the device
electrical characteristics and need to be chosen carefully. Because of the Schottky barrier …