Contact Engineering High-Performance n-Type MoTe2 Transistors
Semiconducting MoTe2 is one of the few two-dimensional (2D) materials with a moderate
band gap, similar to silicon. However, this material remains underexplored for 2D electronics …
band gap, similar to silicon. However, this material remains underexplored for 2D electronics …
MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering
The coexistence of metallic and semiconducting polymorphs in transition-metal
dichalcogenides (TMDCs) can be utilized to solve the large contact resistance issue in …
dichalcogenides (TMDCs) can be utilized to solve the large contact resistance issue in …
Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte
Transition metal dichalcogenides are relevant for electronic devices owing to their sizable
band gaps and absence of dangling bonds on their surfaces. For device development, a …
band gaps and absence of dangling bonds on their surfaces. For device development, a …
Dynamic Memory Cells Using MoS2 Field-Effect Transistors Demonstrating Femtoampere Leakage Currents
Two-dimensional semiconductors such as transition-metal dichalcogenides (TMDs) are of
tremendous interest for scaled logic and memory applications. One of the most promising …
tremendous interest for scaled logic and memory applications. One of the most promising …
Symmetric complementary logic inverter using integrated black phosphorus and MoS2 transistors
The operation of an integrated two-dimensional complementary metal–oxide–
semiconductor inverter with well-matched input/output voltages is reported. The circuit …
semiconductor inverter with well-matched input/output voltages is reported. The circuit …
Vertical-tunneling field-effect transistor based on MoTe2/MoS2 2D–2D heterojunction
B Koo, GH Shin, H Park, H Kim… - Journal of Physics D …, 2018 - iopscience.iop.org
We demonstrate a vertical-tunneling field-effect transistor (FET) based on a MoTe 2/MoS 2
heterojunction. MoTe 2 exhibits p-type characteristics, and it has a relatively small band gap …
heterojunction. MoTe 2 exhibits p-type characteristics, and it has a relatively small band gap …
Black phosphorus based field effect transistors with simultaneously achieved near ideal subthreshold swing and high hole mobility at room temperature
Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next
generation transistor applications due to its superior carrier transport properties. Among …
generation transistor applications due to its superior carrier transport properties. Among …
Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe2 Field-Effect Transistors
Two-dimensional (2D) transition-metal dichalcogenides (TMDs) offer advantages over
traditional silicon in future electronics but are hampered by the prominent high contact …
traditional silicon in future electronics but are hampered by the prominent high contact …
Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes
High-performance p-type two-dimensional (2D) transistors are fundamental for 2D
nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale …
nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale …
van der Waals Epitaxy of High-Mobility Polymorphic Structure of Mo6Te6 Nanoplates/MoTe2 Atomic Layers with Low Schottky Barrier Height
High contact resistance between two-dimensional (2D) transition metal dichalcogenides
(TMDs) and metal electrodes is a practical barrier for applications of 2D TMDs to …
(TMDs) and metal electrodes is a practical barrier for applications of 2D TMDs to …