Field emission electron sources in vacuum electronics are largely considered to achieve
faster response, higher efficiency and lower energy consumption in comparison with …

We investigate the origin of the hysteresis observed in the transfer characteristics of back-
gated field-effect transistors with an exfoliated MoS 2 channel. We find that the hysteresis is …

Schottky barriers (SBs) are often formed at the semiconductor/metal contacts and affect the
electrical behavior of semiconductor devices. In particular, SBs are playing a major role in …

We report the fabrication, electrical, and optical characterizations of few-layered black
phosphorus (BP)-based field-effect transistor (FET). The fabricated device exhibits a p-type …

Few‐layer palladium diselenide (PdSe2) field effect transistors are studied under external
stimuli such as electrical and optical fields, electron irradiation, and gas pressure. The …

We study the effect of electric stress, gas pressure and gas type on the hysteresis in the
transfer characteristics of monolayer molybdenum disulfide (MoS 2) field effect transistors …

This study deals with the electrical transport in back‐gate field‐effect transistors with ultrathin
palladium diselenide (PdSe2) channels. The devices are normally‐on and exhibit dominant …

The metal-graphene contact resistance is one of the major limiting factors toward the
technological exploitation of graphene in electronic devices and sensors. High contact …

A photodetector with bias‐tuneable current is realized by adding a film of single‐walled
carbon nanotubes (CNT), forming a CNT/Si3N4/Si capacitor, to a prefabricated Pt …

This study reports the electrical transport and the field emission properties of individual multi‐
walled tungsten disulphide (WS2) nanotubes (NTs) under electron beam irradiation and …