[PDF][PDF] Design & Optimization of LDMOS Transistor Using Doped Silicon Pockets in Buried Oxide
HD Sunitha, N Keshaveni - 2022 - academia.edu
ABSTRACT Laterally Diffused MOSFET (LDMOS) devices are attractive devices for the new
age flexible electronics applications. LDMOS devices offer various advantages over the …
age flexible electronics applications. LDMOS devices offer various advantages over the …
[PDF][PDF] Improving breakdown voltage in LDMOS with doped silicon pockets in buried oxide
HD Sunitha, N Keshaveni - Indian Journal …, 2017 - sciresol.s3.us-east-2.amazonaws …
An SOILDMOS device with a new technique of having doped silicon pockets in SOI buried
oxide is presented in this paper. The doped silicon pockets reduce the effective electric field …
oxide is presented in this paper. The doped silicon pockets reduce the effective electric field …
[引用][C] n-CHANNEL LDMOS WITH STI FOR BREAKDOWN VOLTAGE ENHANCEMENT AND IMPROVED R^ sub ON^
HD Sunitha, N Keshaveni - Journal of …, 2017 - Journal of Theoretical and Applied …