Current status and future trends of GaN HEMTs in electrified transportation
N Keshmiri, D Wang, B Agrawal, R Hou… - IEEE Access, 2020 - ieeexplore.ieee.org
Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency,
higher power density, and smaller passive components resulting in lighter, smaller and more …
higher power density, and smaller passive components resulting in lighter, smaller and more …
Review of GaN HEMT applications in power converters over 500 W
CT Ma, ZH Gu - Electronics, 2019 - mdpi.com
Because of the global trends of energy demand increase and decarbonization, developing
green energy sources and increasing energy conversion efficiency are recently two of the …
green energy sources and increasing energy conversion efficiency are recently two of the …
Comparison of isolated bidirectional DC/DC converters using WBG devices for more electric aircraft
N Keshmiri, MI Hassan, R Rodriguez… - IEEE Open Journal of …, 2021 - ieeexplore.ieee.org
With the aim towards lighter and more efficient electrical systems in future aircraft, design of
DC/DC converters with high efficiency, power density and improved thermal management …
DC/DC converters with high efficiency, power density and improved thermal management …
Design architecture for continuous-time control of dual active bridge converter
The dual active bridge (DAB) is one of the useful interfaces for the bidirectional power
exchange between two buses with galvanic isolation. In this article, a design framework is …
exchange between two buses with galvanic isolation. In this article, a design framework is …
Analysis and design of a nonisolated bidirectional DC–DC converter based on CLC network
Y Li, Y Wang, H Song, D Xu - IEEE Journal of Emerging and …, 2021 - ieeexplore.ieee.org
This article proposes a nonisolated bidirectional dc–dc converter based on the π type
resonant network for renewable energy sources. The circuit consists of a front-stage boost …
resonant network for renewable energy sources. The circuit consists of a front-stage boost …
Design Challenges of High Frequency High Step Ratio PCB-Based Planar Transformer for GaN Based Dual Active Bridge Converter
Printed copper board (PCB) based planar transformers are a feasible option for dc-dc
bidirectional power conversion applications due to their benefits over traditional wire wound …
bidirectional power conversion applications due to their benefits over traditional wire wound …
Design and Analysis of a High Current GaN Based PCB for Dual Active Bridge Converter for Electric Aircraft Applications
This article centers on the design and performance assessment of a GaN-based low voltage
side power stage tailored for a 5 kW, 28 V, 1: 29 dual active bridge (DAB) converter. While …
side power stage tailored for a 5 kW, 28 V, 1: 29 dual active bridge (DAB) converter. While …
Lifetime Estimation of GaN based DC-DC Converter of Electric Vehicle Application
S Saha, M Das - IECON 2022–48th Annual Conference of the …, 2022 - ieeexplore.ieee.org
The wide bandgap (WBG) semiconductor device-based converters offer improved
performance over Si-based converters. In addition to increased efficiency the WBG-based …
performance over Si-based converters. In addition to increased efficiency the WBG-based …
Optimized GaN-Based Dual Active Bridge (DAB) Converter for More Electric Aircraft (MEA)
N Keshmiri - 2023 - macsphere.mcmaster.ca
Sustainable transportation and electrified transportation have gained traction in recent
years. Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher …
years. Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher …
Advantage of GaN in Phase Shift Full Bridges
GaN FET and Si MOSFET have very different voltage dependence of output capacitance
(Coss). Due to the difference, GaN FET offers low C oss stored charge (Q oss) while Si …
(Coss). Due to the difference, GaN FET offers low C oss stored charge (Q oss) while Si …