Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …
storage, and low energy consumption to fulfill the rapid developments of big data, the …
The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors
Ferroelectric hafnium‐zirconium oxide is one of the most relevant CMOS‐compatible
materials for next‐generation, non‐volatile memory devices. Nevertheless, performance …
materials for next‐generation, non‐volatile memory devices. Nevertheless, performance …
The influence of top and bottom metal electrodes on ferroelectricity of hafnia
In recent years, several experimental approaches have been adopted to study and
understand the mechanism and improve the ferroelectricity of fluorite-type hafnia-based …
understand the mechanism and improve the ferroelectricity of fluorite-type hafnia-based …
Large Remnant Polarization in a Wake-Up Free Hf0.5Zr0.5O2 Ferroelectric Film through Bulk and Interface Engineering
A wake-up free Hf0. 5Zr0. 5O2 (HZO) ferroelectric film with the highest remnant polarization
(P r) value to date was achieved through tuning of the ozone pulse duration, the annealing …
(P r) value to date was achieved through tuning of the ozone pulse duration, the annealing …
Ultra-thin Hf0. 5Zr0. 5O2 thin-film-based ferroelectric tunnel junction via stress induced crystallization
We report on 4.5-nm-thick Hf 0.5 Zr 0.5 O 2 (HZO) thin-film-based ferroelectric tunnel
junctions (FTJs) with a tungsten (W) bottom electrode. The HZO on the W electrode exhibits …
junctions (FTJs) with a tungsten (W) bottom electrode. The HZO on the W electrode exhibits …
Compact artificial neuron based on anti-ferroelectric transistor
Neuromorphic machines are intriguing for building energy-efficient intelligent systems,
where spiking neurons are pivotal components. Recently, memristive neurons with …
where spiking neurons are pivotal components. Recently, memristive neurons with …
Amorphous InGaZnO (a-IGZO) synaptic transistor for neuromorphic computing
Brain-inspired neuromorphic computing emulates the biological functions of the human
brain to achieve highly intensive data processing with low power consumption. In particular …
brain to achieve highly intensive data processing with low power consumption. In particular …
Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2-based ferroelectrics
M Materano, PD Lomenzo, A Kersch… - Inorganic Chemistry …, 2021 - pubs.rsc.org
Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied
unraveling the different causes behind this phenomenon. Among them, oxygen related …
unraveling the different causes behind this phenomenon. Among them, oxygen related …
Oxygen vacancy control as a strategy to achieve highly reliable hafnia ferroelectrics using oxide electrode
Recently, hafnia ferroelectrics with two spontaneous polarization states have attracted
marked attention for non-volatile, super-steep switching devices, and neuromorphic …
marked attention for non-volatile, super-steep switching devices, and neuromorphic …